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20 ta ish

Ish: Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

  1. Nickel: A very fast diffuser in silicon

    Jeanette Lindroos, David P. Fenning, D. J. Backlund +5

    Maqola201317 iqtibos
    ABI

  2. Method for additional purification of the surface of Si(111) single crystal

    A. S. Risbaev, J. B. Khujaniyazov, I. R. Bekpulatov +1

    MaqolaMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 iqtibos
    ABI

  3. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

    Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

    MaqolaSemiconductor materials and interfacesSemiconductors20228 iqtibos
    ABI

  4. The effect of silicon-germanium microheterojunctions on the parameters of silicon solar cells

    Б. А. Абдурахманов, Х. М. Илиев, С. А. Тачилин +2

    MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20107 iqtibos
    ABI

  5. Photovoltaic Properties of Silicon Doped with Manganese and Germanium

    Н. Ф. Зикриллаев, Habibjon Kushiev, С. Б. Исамов +2

    Maqola20237 iqtibos
    ABI

  6. Solid Solubilities of Impurity Elements in Germanium and Silicon*

    F. A. Trumbore

    Maqola19604 iqtibos
    ABI

  7. Direct formation of large-scale multi-layered germanene on Si substrate

    Hsu‐Sheng Tsai, Yuze Chen, Henry Medina +5

    Maqola20153 iqtibos
    ABI

  8. The Diffusion Coefficient of Germanium in Silicon

    M. Ogino, Yasuhisa Oana, M. Watanabe

    Maqola19823 iqtibos
    ABI

  9. Microstructural studies on variation of defect parameters in Zr-Sn alloys and their transition with interchange of solvent and solute in Zr-Ti and Ti-Zr alloy systems by modified Rietveld method and Warren-Averbach method

    Jiten Ghosh, S. K. Chattopadhyay, Ajit Kumar Meikap +1

    Maqola20062 iqtibos
    ABI

  10. Liquid phase epitaxy of (Sn2)1−x(InSb)x solid solution layers

    А. С. Саидов, A. Sh. Razzakov, D. V. Saparov

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20022 iqtibos
    ABI

  11. Recombination activity associated with thermal donor generation in monocrystalline silicon and effect on the conversion efficiency of heterojunction solar cells

    M. Tomassini, Jordi Veirman, Renaud Varache +4

    Maqola20162 iqtibos
    ABI

  12. Synergistic Effects of Ge and Si on the Performances and Mechanism of the Ge<sub><i>x</i></sub>Si<sub>1–<i>x</i></sub> Electrodes for Li Ion Batteries

    D. Duveau, Bernard Fraisse, Frédérique Cunin +1

    Maqola20152 iqtibos
    ABI

  13. Silicon–Germanium: The Legacy Lives On

    B. A. Cook

    Maqola20222 iqtibos
    ABI

  14. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  15. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  16. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  17. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  18. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  19. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  20. Sarlavhasiz

    Boshqa1 iqtibos
    ABI