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14 ta ish

Ish: Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

  1. Influence of deformation and light on the diffusion capacity and differential resistance of the p-n junction of a strong electromagnetic field

    G. Gulyamov, M. G. Dadamirzayev, M. O. Qosimova +1

    MaqolaSilicon and Solar Cell TechnologiesAIP conference proceedings20235 iqtibos
    ABI

  2. The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

    S. H. Shamirzaev, G. Gulyamov, Mukhammadjon G. Dadamirzaev +1

    MaqolaSilicon and Solar Cell TechnologiesSemiconductors20095 iqtibos
    ABI

  3. The current characteristics of p—i—n and p+—i—p+ structures based on hydrogenated amorphous silicon at various temperatures and excitation levels

    D. A. Aronov, R. R. Kabulov, Yu. M. Yuabov

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19884 iqtibos
    ABI

  4. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

    Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20042 iqtibos
    ABI

  5. Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

    Anatoly M. Strel’chuk, Evgenia V. Kalinina, Andrey O. Konstantinov +1

    MaqolaSilicon and Solar Cell TechnologiesMaterials science forum20052 iqtibos
    ABI

  6. On the generation-recombination currents in p-n junctions of semiconductors with continuous gap-state spectrum

    A. Yu. Leĭderman

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19851 iqtibos
    ABI

  7. Computer simulation of generation-recombination currents in amorphous silicon p-n diode structures

    S. A. Azimov, P. M. Karageofgy-Alkalaev, A. Yu. Leĭderman +1

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19841 iqtibos
    ABI

  8. Parameters of silicon microdiodes fabricated by selective epitaxy

    M. V. Drozdova, В. Л. Суханов, V.V. Tuchkevich +2

    MaqolaSilicon and Solar Cell TechnologiesThin Solid Films19760 iqtibos
    ABI

  9. Influence of Irradiation on Excess Currents in SiC pn Structures

    Anatoly M. Strel’chuk, Vitalii V. Kozlovski, A. А. Lebedev +1

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 iqtibos
    ABI

  10. About the Nature of Recombination Current in 4H-SiC pn Structures

    Anatoly M. Strel’chuk, A.V. Mashichev, A. А. Lebedev +2

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 iqtibos
    ABI

  11. Determining certain physical settings of photocells

    A. Yu. Leyderman

    MaqolaSilicon and Solar Cell TechnologiesApplied Solar Energy20110 iqtibos
    ABI

  12. The Nonideality Coefficient of Current-Voltage Characteristics for Asymmetric p-n-Junctions in a Microwave Field

    G. Gulyamov, Dadamirzaev Muhammadjon Gulomkodirovich, Hasan Yusupovich Mavlyanov

    MaqolaSilicon and Solar Cell TechnologiesJournal of Applied Mathematics and Physics20150 iqtibos
    ABI

  13. Peculiarities of the Current Characteristics of a Solar Cell Based on Polycrystalline Silicon at Different Powers of Illumination by Sunlight

    R. R. Kabulov, S. Yu. Gerasimenko, M. U. Khajiev

    MaqolaSilicon and Solar Cell TechnologiesApplied Solar Energy20220 iqtibos
    ABI

  14. P-I-N PHOTODIODES WITH GETTERS CREATED BY ION IMPLANTATION OF MAIN DOPING IMPURITIES

    V.B. Odzhaev, A. N. Pyatlitski, V. S. Prasalovich +6

    MaqolaSilicon and Solar Cell TechnologiesHERALD OF POLOTSK STATE UNIVERSITY Series С FUNDAMENTAL SCIENCES20250 iqtibos
    ABI