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8 ta ish

Ish: Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

  1. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, A.S. Saidov, A. Yu. Leĭderman

    MaqolaNear-Field Optical MicroscopyPhysics of the Solid State20147 iqtibos
    ABI

  2. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

    Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 iqtibos
    ABI

  3. Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

    A.S. Saidov, Sh. N. Usmonov, М. С. Саидов

    MaqolaSilicon Nanostructures and PhotoluminescenceSemiconductors20153 iqtibos
    ABI

  4. Influence of GaAs molecules on the photosensitivity of pSi–n(GaSb)1–x (Si2) x and nGaAs–p(InSb)1–x (Sn2) x heterostructures

    Sh. N. Usmonov

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20162 iqtibos
    ABI

  5. Morphology and Current Transport in a Thin-Film Polycrystalline Au–ZnxCd1–xS–Mo Structure with Wide Photosensitivity Range in the Ultraviolet and Visible Radiation Spectral Region

    R. R. Kobulov, M. A. Makhmudov, S. Yu. Gerasimenko +1

    MaqolaChalcogenide Semiconductor Thin FilmsApplied Solar Energy20182 iqtibos
    ABI

  6. Determining certain physical settings of photocells

    A. Yu. Leyderman

    MaqolaSilicon and Solar Cell TechnologiesApplied Solar Energy20110 iqtibos
    ABI

  7. Structural Features of the Epitaxial Layer of the (GaAs)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(Ge<sub>2</sub>)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Solid Solution Grown from a Bismuth Solution Melt

    A.S. Saidov, M. U. Kalanov, D. V. Saparov +4

    MaqolaSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20240 iqtibos
    ABI

  8. Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase

    A.S. Saidov, Shukrullo Usmonov, D. V. Saparov +4

    MaqolaGaN-based semiconductor devices and materialsAIP conference proceedings20240 iqtibos
    ABI