Asosiy kontentga oʻtish
AkademIndex

Mahsulotlar

Ishlab chiquvchilar uchun

AkademBaseEkotizim uchun ochiq API
← Ishga qaytish

Ushbu ish iqtibos qilgan ishlar

35 ta ish

Ish: Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

  1. Physics of Semiconductor Devices

    Simon M. Sze, Kwok K. Ng

    Kitob200633 iqtibos
    ABI

  2. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

    Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge

    Maqola201111 iqtibos
    ABI

  3. Short-channel effects in SOI MOSFETs

    S. Veeraraghavan, J.G. Fossum

    Maqola19897 iqtibos
    ABI

  4. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    PreprintAdvancements in Semiconductor Devices and Circuit Design20216 iqtibos
    ABI

  5. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20215 iqtibos
    ABI

  6. Optimization of vertically stacked nanosheet FET immune to self-heating

    M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

    MaqolaSemiconductor materials and devicesMicro and Nanostructures20235 iqtibos
    ABI

  7. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 iqtibos
    ABI

  8. MOSFET scaling: Impact of two-dimensional channel materials

    R. Granzner, Zhansong Geng, W. Kinberger +1

    Maqola20164 iqtibos
    ABI

  9. Interfacial heat transport across multilayer nanofilms in ballistic–diffusive regime

    Hafedh Belmabrouk, Houssem Rezgui, Faouzi Nasri +2

    Maqola20203 iqtibos
    ABI

  10. Design optimization of nanoscale electrothermal transport in 10 nm SOI FinFET technology node

    Houssem Rezgui, Faouzi Nasri, Giovanni Nastasi +5

    Maqola20203 iqtibos
    ABI

  11. Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

    N. Loubet, Terence B. Hook, P. Montanini +61

    Maqola20173 iqtibos
    ABI

  12. Thermal conductivity of amorphous SiO2 thin film: A molecular dynamics study

    Wenhui Zhu, Guangping Zheng, Sen Cao +1

    Maqola20183 iqtibos
    ABI

  13. Dimensioning for power and performance under 10nm: The limits of FinFETs scaling

    M. Garcia Bardon, P. Schuddinck, Prasanth Raghavan +5

    Maqola20152 iqtibos
    ABI

  14. Exploring sub-20nm FinFET design with predictive technology models

    Saurabh Sinha, Greg Yeric, Vikas Chandra +2

    Maqola20122 iqtibos
    ABI

  15. Extreme scaling enabled by 5 tracks cells: Holistic design-device co-optimization for FinFETs and lateral nanowires

    M. Garcia Bardon, Yasser Sherazi, P. Schuddinck +14

    Maqola20162 iqtibos
    ABI

  16. Thermal conductivity and thermal boundary resistance of atomic layer deposited high-<i>k</i> dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon

    Ethan A. Scott, John T. Gaskins, Sean W. King +1

    Maqola20182 iqtibos
    ABI

  17. The last silicon transistor: Nanosheet devices could be the final evolutionary step for Moore's Law

    Peide D. Ye, T. Ernst, Mukesh Khare

    Maqola20192 iqtibos
    ABI

  18. Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET

    Sunil Rathore, Rajeewa Kumar Jaisawal, P. N. Kondekar +1

    Maqola20222 iqtibos
    ABI

  19. Investigation of Analog/RF and linearity performance with self-heating effect in nanosheet FET

    Sunil Rathore, Rajeewa Kumar Jaisawal, P. N. Kondekar +1

    Maqola20232 iqtibos
    ABI

  20. Systematic performance benchmarking of nanosheet and FinFET: An intrinsic self-heating perspective

    Sunil Rathore, Rajeewa Kumar Jaisawal, Suneet Kumar Agnihotri +3

    Maqola20252 iqtibos
    ABI

  21. Nanoscale thermal transport

    David G. Cahill, W. K. Ford, Kenneth E. Goodson +5

    Maqola20032 iqtibos
    ABI

  22. Quantum capacitance devices

    Serge Luryi

    Maqola19882 iqtibos
    ABI

  23. Analysis of Novel Core-Shell Junctionless Nanosheet FET for CMOS Logic Applications

    Vakkalakula Bharath Sreenivasulu, M. Prasad, Epuri Deepthi +2

    Maqola20242 iqtibos
    ABI

  24. Impact of the Self-Heating Effect on Nanosheet Field Effect Transistor Performance

    Billel Smaani, Neha Paras, Shiromani Balmukund Rahi +3

    Maqola20232 iqtibos
    ABI

  25. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

    A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignSilicon20251 iqtibos
    ABI