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Kh.S. Daliev

26 works

Institute of Applied Physics Research, National University of Uzbekistan, Tashkent, Uzbekistan

  1. Features of the behavior of lanthanum and hafnium atoms in silicon

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

    ArticleSilicon and Solar Cell TechnologiesTechnical Physics Letters20069 citations
    ABI

  2. Raman spectroscopy of silicon, doped with platinum and irradiated by protons

    Sharifa B. Utamuradova, Kh.S. Daliev, А. В. Станчик +1

    ArticleSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20239 citations
    ABI

  3. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

    I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

    ArticleChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20239 citations
    ABI

  4. Thermally Induced Deep Centers in Silicon Doped with Europium or Lanthanum

    Kh.S. Daliev, Sharifa B. Utamuradova, I. Kh. Khamidzhonov +3

    ArticleSilicon Nanostructures and PhotoluminescenceInorganic Materials20018 citations
    ABI

  5. The Influence of the Impurities with Deep Levels on the Iron Behavior in Silicon

    С. З. Зайнабидинов, Kh.S. Daliev, K. P. Abdurakhmanov +3

    ArticleSilicon and Solar Cell TechnologiesModern Physics Letters B19974 citations
    ABI

  6. Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium

    Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +4

    ArticleSemiconductor materials and interfacesEast European Journal of Physics20243 citations
    ABI

  7. Defect Structure of Silicon Doped with Erbium

    Sharifa B. Utamuradova, Kh.S. Daliev, Alisher Khaitbaev +3

    ArticleSilicon and Solar Cell TechnologiesEast European Journal of Physics20243 citations
    ABI

  8. Changes in the Structure and Properties of Silicon During Ytterbium Doping: The Results of o Comprehensive Analysis

    Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +3

    ArticleSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20242 citations
    ABI

  9. Properties of Single Crystal Silicon Doped with Vanadium

    Kh.S. Daliev, Zafarjon M. Khusanov

    ArticleChalcogenide Semiconductor Thin FilmsEast European Journal of Physics20241 citations
    ABI

  10. Influence of the Temperature and Cyclic Deformations of (BixSb1–x)2Te3 Films on Their Resistance

    Kh.S. Daliev, M. M. Ahmedov, M. K. Onarkulov

    ArticleAdvanced Thermoelectric Materials and DevicesJournal of Engineering Physics and Thermophysics20211 citations
    ABI

  11. Technology of fabrication of CdS<sub>x</sub>Te<sub>1-x</sub> solid solution on silicon substrate

    I.B. Sapaev, S. Sadullaev, D. Babajanov +5

    ArticleAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20231 citations
    ABI

  12. Influence of the parameters to transition capacitance at nCdS-pSi heterostructure

    I.B. Sapaev, Б. Сапаев, S. Sadullaev +5

    ArticleChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20231 citations
    ABI

  13. Study of a solar cell with a silicon-based photodiode structure

    Sharifa B. Utamuradova, Kh.S. Daliev, Shakhrukh Kh. Daliev +3

    ArticleChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20241 citations
    ABI

  14. Volt-Ampere Characteristics of Hetero Film Photosensitive Structure Au-CdS-nSi-CdTe-Au

    Sharifa B. Utamuradova, Kh.S. Daliev, Shakhrukh Kh. Daliev +3

    ArticleChalcogenide Semiconductor Thin FilmsEast European Journal of Physics20241 citations
    ABI

  15. Main properties of silicides of the Mo - Si system

    Sharifa B. Utamuradova, Kh.S. Daliev, S. A. Muzafarova +2

    ArticleIntermetallics and Advanced Alloy PropertiesE3S Web of Conferences20231 citations
    ABI

  16. Influence of the Bremsstrahlung on the radiative induction of charge and interface states in MOS transistors

    A. É. Atamuratov, Kh.S. Daliev, S.Z. Zajnabidinov

    ArticleIntegrated Circuits and Semiconductor Failure AnalysisUzbekiston Fizika Zhurnali19920 citations
    ABI

  17. Silicon doped by rare earth elements - prospective material of microelectronics

    Kh.S. Daliev, S.Z. Zajnabidinov

    ArticleSemiconductor materials and interfaces19950 citations
    ABI

  18. The capacitance and IR-spectroscopy of defects in silicon and silicon structures

    S.Z. Zajnabidinov, Kh.S. Daliev

    ArticleThermography and Photoacoustic Techniques19950 citations
    ABI

  19. Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2 interface of a MOS transistor

    A. É. Atamuratov, С. З. Зайнабидинов, А. Yusupov +2

    ArticleSemiconductor materials and devicesTechnical Physics19970 citations
    ABI

  20. Capacitance transient spectroscopy of radiation defects on the interface Si-SiO 2 of silcon MIS-structures

    Shakhrukh Kh. Daliev, Sharifa B. Utamuradova, Kh.S. Daliev

    ArticleSilicon and Solar Cell Technologies20040 citations
    ABI

  21. Investigation of properties of silicon doped titanium and interaction of titanium atoms with other impurities

    Kh.S. Daliev

    ArticleIntermetallics and Advanced Alloy Properties20040 citations
    ABI

  22. Europium effect on the property of metal insulator silicon (MIS) structures

    Kh.S. Daliev

    ArticleSemiconductor materials and devices20050 citations
    ABI

  23. Transient capacitance spectroscopy of silicon MIS-structures with an impurity of vanadium

    Kh.S. Daliev

    ArticleSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20170 citations
    ABI

  24. Interaction of vanadium atoms with different states of oxygen in silicon

    Kh.S. Daliev

    ArticleSilicon and Solar Cell TechnologiesUzbekiston Fizika Zhurnali20170 citations
    ABI

  25. EFFECT OF TEMPERATURE TREATMENT ON THE ENERGY SPECTRUM OF DEFECTS IN SILICON DOPED WITH MOLYBDENUM

    Kh.S. Daliev, Anifa Paluanova

    ArticleAdvanced Materials and Semiconductor TechnologiesEurasianUnionofScientists20210 citations
    ABI