Semiconductor Quantum Structures and Devices

469 works

Influence of gamma doses on the optical and electrical properties of oxygen-impurity and chromium-doped GaAs
M. Yu. Tashmetov, Abror Abdaminov
ArticleSemiconductor Quantum Structures and DevicesJournal of Physics Condensed Matter20251 citations
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Study of radiation-induced effects in GaAs(O):Cr under 2 Mev electron irradiation using Raman, FTIR and Hall effect measurements
M. Yu. Tashmetov, Khabibulla Djangabaev
ArticleSemiconductor Quantum Structures and DevicesPhysica Scripta20251 citations
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Gate-controlled rectification and broadband photodetection in a P–N diode based on TMDC heterostructures
Ehsan Elahi, Sobia Nisar, Muhammad Rabeel +7
Article2D Materials and ApplicationsMaterials Advances20231 citations
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Study of certain properties of Si-Si1−xGex (0 ≤ x ≤ 1) structures grown from a restricted tin-based solution-melt by liquid-phase epitaxy
Б. Сапаев, A. S. Saidov
ArticleSemiconductor materials and interfacesSemiconductors20051 citations
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Effect of Hydrostatic Pressure and Temperature on Thermodynamic Properties of Electron Gas in Narrow Bandgap Semiconductor Nanowires
A. B. Davlatov, G. Gulyamov, E. Feddi +3
ArticleSemiconductor Quantum Structures and DevicesJournal of Low Temperature Physics20241 citations
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Multicomponent Solid Solutions (ZnSe)1-x-y(Si2)x(GaP)y
А. С. Саидов, Usmonov Sn. N., U. Kh. Rakhmonov +2
ArticleSemiconductor Quantum Structures and DevicesJournal of Materials Science Research20121 citations
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Growth and photosensitivity of pSi-n(GaSb)1 − x (Si2) x structures
А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2
ArticleSemiconductor materials and interfacesApplied Solar Energy20071 citations
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The synthesis and properties of epitaxial layers of (Si2)1−x(GaAs)x solid solutions on silicon substrates
Б. Сапаев, А. С. Саидов, B. N. Zaveryukhin
ArticleSemiconductor materials and interfacesTechnical Physics Letters20041 citations
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Growth and photoelectric properties of graded-gap Si-(Si2)1−x(GaP)x heterostructures
Б. Сапаев, А. С. Саидов, S. Dadamukhamedov
ArticleSemiconductor Quantum Structures and DevicesTechnical Physics20041 citations
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Influence of Germanium and Zinc Selenium Nanocrystals on the Photoelectric Properties of the n-GaAs – p-(GaAs)0.69(Ge2)0.17(ZnSe)0.14 Heterostructure
С. З. Зайнабидинов, Akramjon Y. Boboev, Jakhongir N. Usmonov
ArticleSemiconductor materials and interfacesAlternative Energy and Ecology (ISJAEE)20191 citations
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Strong Interference Luminescence of Mixed Modes in the Neighborhood of the Critical Value of Exciton Decay
Б. Ж. Ахмадалиев, N. Kh. Yuldashev
ArticleStrong Light-Matter InteractionsOptics and Spectroscopy20211 citations
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Interaction of multiply charged manganese nanoclusters with selenium and tellurium atoms in silicon
М. К. Бахадырханов, Z.M. Saparniyazova, Х. М. Илиев +1
ArticleSemiconductor Quantum Structures and DevicesInorganic Materials20151 citations
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Nonlinear Properties of an Inhomogeneous Diode Structure in a Strong Microwave Field
Sanobar Reymbaeva, G. Abdurakhmanov, Aleksandra Orel
ArticleSemiconductor Quantum Structures and DevicesWorld Journal of Condensed Matter Physics20231 citations
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Photoelectric Characteristics of the Heterojunction n-GaAs-p-(GaAs)1-x-y(Ge2)x(ZnSe)y
Akramjon Y. Boboev
ArticleSemiconductor Quantum Structures and DevicesEast European Journal of Physics20241 citations
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Conductors crystallization—a condition for synthesizing new dopant compounds
М. С. Саидов
ArticleSemiconductor Quantum Structures and DevicesApplied Solar Energy20101 citations
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Extrinsic thermal voltaic effect in photothermal elements
М. С. Саидов
ArticleThermography and Photoacoustic TechniquesApplied Solar Energy20121 citations
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Anomalously long lifetime of holes in silicon with nanoclusters of manganese atoms
М. К. Бахадырханов, С. Б. Исамов, Х. М. Илиев +1
ArticleSilicon Nanostructures and PhotoluminescenceSemiconductors20151 citations
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The Effect of Stabilizing the Lifetime of Charge Carriers in Semiconductors in a Magnetic Field
Т. Т. Muratov
ArticleSemiconductor Quantum Structures and DevicesMoscow University Physics Bulletin20231 citations
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Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates
V. V. Mamutin, V. P. Ulin, V. V. Tret’yakov +3
ArticleGaN-based semiconductor devices and materialsTechnical Physics Letters19991 citations
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Special Features of Thermoelectric Phenomena in Granulated Semiconductors
Х. Б. Ашуров, B. M. Abdurakhmanov, Flyra Djurabekova +3
ChapterMaterial Science and ThermodynamicsNATO science for peace and security series. B, Physics and biophysics20131 citations
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Photosensitivity of pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y , pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y ,-n(GaSb) structures
А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2
ArticleSemiconductor materials and interfacesApplied Solar Energy20081 citations
ABI
Photothermovoltaic effect in a pSi-n(Si2)1 − x − y (ZnSe) x (GaP) y (0 ≤ x ≤ 0.88, 0 ≤ y ≤ 0.09) structure
А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1
ArticleSemiconductor Quantum Structures and DevicesApplied Solar Energy20131 citations
ABI
Electron eigenvalues in quantum well of AlAs/InxGa1−xAs/AlAs heterostructures with InAs nanoinserts
Paziljon Baymatov, Bakhrom Abdulazizov, Makhmudjon Tokhirjonov
ArticleSemiconductor Quantum Structures and DevicesThe European Physical Journal B20231 citations
ABI
Polarization-Spectral Dependences of the Three-Photon Interband Absorption of Light and Linear-Circular Dichroism in Semiconductors with Cubic Symmetry
Voxob Rustamovich Rasulov, Rustam Yavkachovich Rasulov, I. Éshboltaev +1
ArticleSemiconductor Quantum Structures and DevicesSemiconductors20221 citations
ABI
On the Thermodynamics of a Two-Dimensional Electron Gas with Non-Parabolic Dispersion
G. Gulyamov, B. T. Abdulazizov
ArticleSemiconductor Quantum Structures and DevicesWorld Journal of Condensed Matter Physics20161 citations
ABI