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Silicon and Solar Cell Technologies

568 works

  1. Properties of silicon doped by gadolinium and samarium during growth

    Muratali Bazarbaev, С. И. Власов, D.E. Nazirov

    ArticleSilicon and Solar Cell Technologies20040 citations
    ABI

  2. Capacitance transient spectroscopy of radiation defects on the interface Si-SiO 2 of silcon MIS-structures

    Shakhrukh Kh. Daliev, Sharifa B. Utamuradova, Kh.S. Daliev

    ArticleSilicon and Solar Cell Technologies20040 citations
    ABI

  3. Solar cells of Al x Ga 1-x As/GaAs-type with microrelief boundary

    N. L. Dmitruk, O. Yu. Borkovskaya, В. П. Костылев +3

    Articlesolar cell performance optimization20040 citations
    ABI

  4. Investigation of γ-radiation defect formation at the Si-SiO 2 interface

    S.Z. Zaynabidinov, Sh. Kh. Yulchiev, Р. Алиев

    ArticleIntegrated Circuits and Semiconductor Failure Analysis20040 citations
    ABI

  5. Formation processes of radiation defects in silicon at high temperature irradiation

    N.A. Tursunov, Sh. Makhkamov, M. Ashurov +3

    ArticleSilicon and Solar Cell Technologies20040 citations
    ABI

  6. Interaction of radiating defects with impurity atoms in silicon

    N.A. Sultanov

    ArticleSilicon and Solar Cell Technologies20040 citations
    ABI

  7. The electrical and optical properties of InAs irradiated with electrons (∼2 MeV): The energy structure of intrinsic point defects

    V. N. Brudnyı̆, S. N. Grinyaev, N. G. Kolin

    ArticleAdvanced Semiconductor Detectors and MaterialsSemiconductors20050 citations
    ABI

  8. Silicon Carbide for Alpha, Beta, Ion and Soft X-Ray High Performance Detectors

    G. Bertuccio, S. Binetti, S. Caccia +9

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 citations
    ABI

  9. Influence of Irradiation on Excess Currents in SiC pn Structures

    Anatoly M. Strel’chuk, Vitalii V. Kozlovski, A. А. Lebedev +1

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 citations
    ABI

  10. Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions

    Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +6

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 citations
    ABI

  11. The effect of γ radiation on the temperature dependence of the surface generation velocity at a Si-SiO2 interface

    П. Б. Парчинский, L. G. Ligai, Kh. Zh. Mansurov +1

    ArticleSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20050 citations
    ABI

  12. On the possibility of determining the diffusion length of excitons in semiconductors from photomagnetic measurement data

    I. G. Atabaev, N. A. Matchanov, M. U. Khazhiev +1

    ArticleSilicon and Solar Cell TechnologiesPhysics of the Solid State20050 citations
    ABI

  13. Composition and photoelectric properties of epitaxial silicon layers grown from a tin-based solution melt of technical silicon

    Б. Сапаев, А. С. Саидов, Sh.I. Ibragimov

    ArticleSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20050 citations
    ABI

  14. Calculating of neutron transmutation doping for silicon in SPRR-300

    Wei Chen

    ArticleSilicon and Solar Cell TechnologiesHedianzixue yu tance jishu20050 citations
    ABI

  15. New Methods for Improvement of Efficiency of Solar Cells on the Basic Si-Monocrystals

    Р. А. Муминов, Oybek Tursunkulov

    ChapterSilicon and Solar Cell TechnologiesNATO science series. Series IV, Earth and environmental sciences20050 citations
    ABI

  16. Effect of ultrasonic treatment on the generation characteristics of irradiated silicon-silicon-dioxide interface

    П. Б. Парчинский, С. И. Власов, Л. Г. Лигай

    ArticleSilicon Nanostructures and PhotoluminescenceSemiconductors20060 citations
    ABI

  17. About the Nature of Recombination Current in 4H-SiC pn Structures

    Anatoly M. Strel’chuk, A.V. Mashichev, A. А. Lebedev +2

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 citations
    ABI

  18. Diffusion of yittrium in silicon

    D. É. Nazyrov, Muratali Bazarbaev, A. A. Iminov

    ArticleSilicon and Solar Cell TechnologiesSemiconductors20060 citations
    ABI

  19. Diffusion of terbium in silicon

    D. É. Nazyrov

    ArticleGraphite, nuclear technology, radiation studiesSemiconductors20060 citations
    ABI

  20. Multi-Scale Simulation of MBE-Grown SiC/Si Nanostructures

    Alexander Schmidt, Yuri V. Trushin, K. L. Safonov +4

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 citations
    ABI

  21. The effect of thermal treatment on the charge-carrier lifetime in nickel-doped silicon

    M. Kаrimov, A. O. Kurbanov, С. З. Зайнабидинов +1

    ArticleSilicon and Solar Cell TechnologiesRussian Physics Journal20060 citations
    ABI

  22. Influence of γ- radiation on the recombination properties of P-type nickel doped silicon

    A. O. Kurbanov, M. Kаrimov

    ArticleSilicon and Solar Cell Technologies20060 citations
    ABI

  23. Influence of thermal treatment on characteristics of silicon doped by lanthanium

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

    ArticleSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20060 citations
    ABI

  24. The Influence of the Atomic Oxygen Plasma on the Surface and on the Photoelectric Properties of Solar Arrays

    Б.Г. Атабаев, L.F. Lifanova, F. Rakhimova +2

    Chaptersolar cell performance optimizationKluwer Academic Publishers eBooks20060 citations
    ABI

  25. Temperature effect on the current-voltage characteristics of single-crystalline Si photovoltaic arrays

    Р. А. Муминов, М. Н. Турсунов, О. Ф. Тукфатуллин

    ArticleSilicon and Solar Cell TechnologiesApplied Solar Energy20070 citations
    ABI