Silicon and Solar Cell Technologies

568 works

1. Influence of the Post-Diffusion Hardening Rate and Thermal Treatment on the Thermal Stability of the Charge-Carrier Lifetime in Overcompensated n-Si<B, S>

   M. Kаrimov, A. K. Karakhodzhaev

   ArticleSemiconductor materials and interfacesRussian Physics Journal20010 citations

   ABIABI:AkademIndex/openalex/2001.article.000182

2. Nonlinear and dynamic properties of charge transport in polycrystalline silicon under optical illumination

   K. M. Doshchanov

   ArticleThin-Film Transistor TechnologiesSemiconductors20010 citations

   ABIABI:AkademIndex/openalex/2001.article.000246

3. Effect of doping with nitrogen on electrical properties and erbium electroluminescence of a-Si:H(Er) films

   O. I. Kon’kov, E. I. Terukov, L. S. Granitsyna

   ArticleThin-Film Transistor TechnologiesSemiconductors20010 citations

   ABIABI:AkademIndex/openalex/2001.article.000249

4. On the stabilization of electrical properties of compensated silicon as a result of irradiation with 60Co gamma-ray quanta

   Marat S. Yunusov, M. Kаrimov, M. A. Dzhalelov

   ArticleSilicon and Solar Cell TechnologiesSemiconductors20010 citations

   ABIABI:AkademIndex/openalex/2001.article.000250

5. Investigation of internal conversion electron lines by track counting technique

   T.A. Islamov, V. G. Kalinnikov, N. T. Kambarova +6

   ArticleElectron and X-Ray Spectroscopy TechniquesPis'ma v Zhurnal Tekhnicheskoj Fiziki20010 citations

   ABIABI:AkademIndex/openalex/2001.article.000350

6. Defect formation and crystallization in a-Si:H induced by Si+ implantation

   O. A. Golikova, E. V. Bogdanova, Alexey N. Kuznetsov∥ +4

   ArticleThin-Film Transistor TechnologiesJournal of Non-Crystalline Solids20020 citations

   ABIABI:AkademIndex/openalex/2002.article.000285

7. Computer simulation of ion implantation with visual observation of the implantation profiles

   F.G. Djurabekova, T.S. Pugacheva, F.F. Umarov +1

   ArticleSilicon and Solar Cell Technologies2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432)20020 citations

   ABIABI:AkademIndex/openalex/2002.article.000360

8. Photovoltaic solar electricity: state of the art and future prospects

   T.M. Razykov

   ArticleChalcogenide Semiconductor Thin FilmsInternational Conference on Electrical Machines and Systems20030 citations

   ABIABI:AkademIndex/openalex/2003.article.000086

9. Radiation Hardness of Silicon Carbide

   A. А. Lebedev, Vitalii V. Kozlovski, N. B. Strokan +4

   ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 citations

   ABIABI:AkademIndex/openalex/2003.article.000098

10. SiC X-Ray Detectors for Spectroscopy and Imaging over a Wide Temperature Range

    G. Bertuccio, R. Casiraghi, E. Gatti +5

    ArticleParticle Detector Development and PerformanceMaterials science forum20030 citations

    ABIABI:AkademIndex/openalex/2003.article.000102

11. Influence of Extended Structural Defects on the Characteristics of Electroluminescence in Efficient Silicon Light-Emitting Diodes

    Н. А. Соболев, A. M. Emel’yanov, E. I. Shek +1

    ArticleSilicon Nanostructures and PhotoluminescenceDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20030 citations

    ABIABI:AkademIndex/openalex/2003.article.000127

12. The effect of ultrasonic treatment on the generation characteristics of a Si-SiO2 interface

    П. Б. Парчинский, С. И. Власов, Л. Г. Лигай +1

    ArticleSilicon and Solar Cell TechnologiesTechnical Physics Letters20030 citations

    ABIABI:AkademIndex/openalex/2003.article.000158

13. Computer simulation of ion implantation with visual observation of the implantation profiles

    Flyura Djurabekova, T.S. Pugacheva, F. F. Umarov +1

    ArticleIon-surface interactions and analysis2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432)20030 citations

    ABIABI:AkademIndex/openalex/2003.article.000176

14. Minority carrier lifetimes in polycrystalline silicon treated with liquid metals

    Б. Сапаев

    ArticleSilicon and Solar Cell TechnologiesTechnical Physics Letters20030 citations

    ABIABI:AkademIndex/openalex/2003.article.000187

15. Uniform acceptor distribution in neutron-transmutation-doped far-infrared p-Ge lasers

    E. W. Nelson, M. V. Dolguikh, Elena Flitsiyan +5

    ArticleLaser Material Processing TechniquesProceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE20030 citations

    ABIABI:AkademIndex/openalex/2003.article.000243

16. p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation

    Alexander M. Ivanov, N. B. Strokan, Denis Davydov +4

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 citations

    ABIABI:AkademIndex/openalex/2003.article.000282

17. Study of photocapacitance in diodes fabricated from silicon doped with vanadium

    Kh. T. Igamberdiev, A. T. Mamadalimov, Р. А. Муминов +2

    ArticleSemiconductor materials and interfacesSemiconductors20030 citations

    ABIABI:AkademIndex/openalex/2003.article.000291

18. Diffusion of ytterbium in silicon

    D. É. Nazyrov

    ArticleGraphite, nuclear technology, radiation studiesSemiconductors20030 citations

    ABIABI:AkademIndex/openalex/2003.article.000316

19. Interaction of deep level impurities with radiation defects in silicon under γ -irradiation

    N.J. Odilova, M. Kаrimov, K. A. Begmatov +2

    ArticleSilicon and Solar Cell Technologies20030 citations

    ABIABI:AkademIndex/openalex/2003.article.000389

20. Carrier removal rates in compensated silicon at γ-radiation

    M. Kаrimov, Sh. Mahkamov, Zhalelov

    ArticleSilicon and Solar Cell Technologies20030 citations

    ABIABI:AkademIndex/openalex/2003.article.000396

21. Radiation Resistance and Mechanical Stability of SiO2–BaO-Based Glass Coatings for Space Solar-Cell Panels

    M. A. Mussaeva, Э. М. Ибрагимова, M. I. Muminov +1

    Articlesolar cell performance optimizationGlass Physics and Chemistry20040 citations

    ABIABI:AkademIndex/openalex/2004.article.000059

22. Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers

    Evgenia V. Kalinina, G. Kholuyanov, Anatoly M. Strel’chuk +4

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 citations

    ABIABI:AkademIndex/openalex/2004.article.000109

23. X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface

    T. S. Argunova, M. Yu. Gutkin, Jung Ho Je +5

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 citations

    ABIABI:AkademIndex/openalex/2004.article.000164

24. Structural Transformation of Dislocated Micropipes in Silicon Carbide

    M. Yu. Gutkin, A. G. Sheĭnerman, T. S. Argunova +4

    ArticleAdvanced Surface Polishing TechniquesMaterials science forum20040 citations

    ABIABI:AkademIndex/openalex/2004.article.000208

25. Modification of the Silicon Carbide by Proton Irradiation

    Е. В. Богданова, Vitalii V. Kozlovski, D. S. Rumyantsev +2

    ArticleSilicon and Solar Cell TechnologiesMaterials science forum20040 citations

    ABIABI:AkademIndex/openalex/2004.article.000214