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Silicon Nanostructures and Photoluminescence

380 works

  1. Impact of bombardment by Ar<sup>+</sup>, Na<sup>+</sup> and <i>O</i><sub>2</sub><sup>+</sup> ions on spectra of elastically scattered electrons of single-crystal Ge

    S. T. Abraeva, Д. А. Ташмухамедова, Soadat Gulyamova +2

    ArticleSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20230 citations
    ABI

  2. Investigations of the formation of nanosized objects in manganese implanted silicon single crystals by the methods of Raman scattering of light and atomic force microscopy

    Э. У. Арзикулов, F. Salakhitdinov, F Kholmurodov +1

    ArticleIon-surface interactions and analysisJournal of Physics Conference Series20230 citations
    ABI

  3. LASER-DOPED METAL-PLATED BIFACIAL SILICON SOLAR CELLS

    Mamirov Abduvokhid Mukhammadamin oʻgʻli

    ArticleSilicon Nanostructures and PhotoluminescenceZenodo (CERN European Organization for Nuclear Research)20230 citations
    ABI

  4. LASER-DOPED METAL-PLATED BIFACIAL SILICON SOLAR CELLS

    Mamirov Abduvokhid Mukhammadamin oʻgʻli

    ArticleSilicon Nanostructures and PhotoluminescenceZenodo (CERN European Organization for Nuclear Research)20230 citations
    ABI

  5. INTRABAND MECHANISM OF THREE-PHOTON ABSORPTION OF POLARIZED RADIATION IN DIAMOND-LIKE SEMICONDUCTORS

    Sharifa Bekmuratovna Utamuratova, Rasulov Voxob Rustamovich, Isomiddinova Umida Mamurjonova +1

    ArticleRadiative Heat Transfer StudiesAustrian Journal of Technical and Natural Sciences20230 citations
    ABI

  6. Piezocapacitance spectroscopy of a radiation defect in silicon

    Numonjon Sultanov, Zokirjon Mirzajonov, Б. Х. Каримов

    ArticleSilicon and Solar Cell TechnologiesE3S Web of Conferences20230 citations
    ABI

  7. Pressure as the device for changing electric parameters of Schottky diodes based on Si mono crystal

    T. Z. Nasirov, Akmal Turayev, M.A. Muydinova +1

    ArticleSemiconductor materials and interfacesE3S Web of Conferences20230 citations
    ABI

  8. Injection photodetectors operating in a wide spectral range

    I.B. Sapaev, U. Masharipova, Takhira Sidikova

    ArticleSilicon and Solar Cell TechnologiesE3S Web of Conferences20230 citations
    ABI

  9. Quasi-molecules of Sulphur in Silicon

    Shoikrom I. Askarov, Bashirulla B. Sharipov, Abdulaziz Sh. Mavlyanov +3

    ArticleSemiconductor materials and interfaces20230 citations
    ABI

  10. Lateral Photoelectric Effect In Iron-Silicon Dioxide-Compensated Silicon Hybrid Structures

    Э. У. Арзикулов, Alisher D. Nurimov, F. Salakhitdinov +4

    ArticleSemiconductor materials and interfacesEast European Journal of Physics20230 citations
    ABI

  11. Dangerous Bonds Individual of Hydrogenated Amorphous Silicon and Defect Absorption Spectra

    Р. Г. Икрамов, Khurshidbek A. Muminov, Mashkhura A. Nuritdinova +3

    ArticleThin-Film Transistor TechnologiesEast European Journal of Physics20230 citations
    ABI

  12. Epitaxial Growth of Ge Nanofilms on the Surface of SrF2

    S. T. Abraeva, Д. А. Ташмухамедова, Б. Е. Умирзаков

    ArticleSemiconductor materials and devicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20230 citations
    ABI

  13. Granulated Silicon and Thermal Energy Converters on Its Basis

    B. M. Abdurakhmanov, M. M. Adilov, O. V. Trunilina +1

    ChapterAdvanced Thermoelectric Materials and DevicesEAI/Springer Innovations in Communication and Computing20230 citations
    ABI

  14. Thermally Stimulated Transformation of Oxygen Atoms between Phase States in a Silicon Single Crystal

    M. U. Kalanov, I. I. Sadikov, A. V. Khugaev +4

    PreprintSilicon Nanostructures and PhotoluminescenceResearch Square20230 citations
    ABI

  15. Numerical study of changes in the mechanical and thermal property of porous silicon sample with increasing initial temperature: A molecular dynamics approach

    Shupeng Liu, Ali B.M. Ali, Muntadher Abed Hussein +5

    ArticleSilicon Nanostructures and PhotoluminescenceInternational Communications in Heat and Mass Transfer20240 citations
    ABI

  16. Surface morphology analysis of silicon doped with erbium atoms

    Sharifa B. Utamuradova, Jonibek Khamdamov, Jasur Zarifbayev +1

    ArticleSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20240 citations
    ABI

  17. Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals

    N. A. Turgunov, Sh. K. Akbarov, N. B. Khaytimmetov +1

    ArticleSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20240 citations
    ABI

  18. Influence of electron irradiation on the microhardness of cobalt doped silicon

    Mannab Yusupovich Tashmetov, Shermaxmat Makhkamov, M.N. Erdonov +4

    ArticleSilicon and Solar Cell TechnologiesAIP conference proceedings20240 citations
    ABI

  19. On how Doping with Atoms of Gadolinium and Scandium affects the Surface Structure of Silicon

    BE Egamberdiev, Schaller Kh, Kh Khamidjonov +2

    ArticleSemiconductor materials and interfacesIgMin Research20240 citations
    ABI

  20. Effect of О&lt;sub&gt;2&lt;/sub&gt;&lt;sup&gt;+&lt;/sup&gt; Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface

    G. Kh. Allayarova, Б. Е. Умирзаков, A. K. Tashatov

    ArticleIon-surface interactions and analysisПоверхность Рентгеновские синхротронные и нейтронные исследования20240 citations
    ABI

  21. Photoinduced Absorption Spectrum of GeSi/Si Quantum Dots in the Mid-IR and Terahertz Ranges under Resonant and Non-resonant Optical Pumping

    Danila Kararulov, Ratmir V. Ustimenko, G A Melentev +6

    ArticlePhotonic and Optical Devices20240 citations
    ABI

  22. The effect of atmospheric oxide thermodesorption on negative-ion atomic and cluster sputtering of silicon single crystal by cesium ions

    Б.Г. Атабаев, R. Djabbarganov, A. S. Khalmatov +2

    ArticleIon-surface interactions and analysisПоверхность Рентгеновские синхротронные и нейтронные исследования20240 citations
    ABI

  23. Auto-oscillations of current in injection structures p+-p (Si&lt;Mn&gt;) based on heavily compensated silicon

    K. S. Ayupov, Hayrulla Zikrillaev, Elyor Saitov +3

    ArticleSemiconductor materials and interfacesPhysical Sciences and Technology20240 citations
    ABI

  24. Theoretical Evaluation of Silicon Crystal Growth Using Gallium Solvent

    A. Sh. Razzokov, Khushnudbek Eshchanov

    ArticleSilicon and Solar Cell TechnologiesProceedings of Pakistan Academy of Sciences A Physical and Computational Sciences20240 citations
    ABI

  25. Formation of Binary Compounds of Impurity Atoms of Sulfur and Zinc in Silicon

    M. K. Khakkulov, A. Sh. Mavlyanov, О. Э. Саттаров +2

    ArticleSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20240 citations
    ABI