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22 works

Work: Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

  1. Deep level centers in silicon carbide: A review

    A. А. Lebedev

    Review article19996 citations
    ABI
  2. Investigation of boron diffusion in 6H-SiC

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  3. Oxidation kinetics of hot-pressed silicon carbide

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  4. A new approach in impurity doping of 4H-SiC using silicidation

    Chin‐Che Tin, Suwan Mendis, Michelle T. Tin +2

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  5. Effect of deep levels on current excitation in 6H-SiC diodes

    N.I. Kuznetsov, J. A. Edmond

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  6. The Method of Solid State Impurity Diffusion and Doping In 4H-SiC

    Suwan Mendis, Chin-che Tin, Ilkham G. Atabaev +1

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    ABI
  7. Phonons in 3C-, 4H-, and 6H-SiC

    Hermann Nienhaus, T.U. Kampen, Winfried Mönch

    Article19952 citations
    ABI
  8. Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode

    Koji Nakayama, Ryosuke Ishii, Katsunori Asano +3

    Article20112 citations
    ABI
  9. Shallow acceptor levels in 4H- and 6H-SiC

    S. R. Smith, A. O. Evwaraye, W. C. Mitchel +1

    Article19992 citations
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