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Works cited by this work

10 works

Work: Effect of Injection Phenomena on Electrical Properties of pSi--nSi1--xSnx Heterojunctions

  1. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    ArticleMaterial Science and ThermodynamicsSemiconductors200913 citations
    ABI

  2. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    ArticleSemiconductor Quantum Structures and DevicesSemiconductors20109 citations
    ABI

  3. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature

    Sh. N. Usmonov, Ш. А. Мирсагатов, A. Yu. Leyderman

    ArticleChalcogenide Semiconductor Thin FilmsSemiconductors20108 citations
    ABI

  4. On the theory of sublinear current-voltage characteristics of semiconductor structures

    A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

    Article19788 citations
    ABI

  5. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leĭderman

    ArticleNear-Field Optical MicroscopyPhysics of the Solid State20147 citations
    ABI

  6. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    ArticleSemiconductor materials and interfacesSemiconductors20184 citations
    ABI

  7. RESEARCH OF THE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF p-Si-n-(Si2)1 - x - y(Ge2)x(ZnSe)y-STRUCTURES ON TEMPERATURE

    А. С. Саидов, K. A. Amonov, Ada Yul'evna Leyderman

    ArticleSemiconductor materials and interfacesComputational nanotechnology20194 citations
    ABI

  8. Structure and photoelectric properties of Si1 − x Sn x epilayers

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +1

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20103 citations
    ABI

  9. Charge Transport Mechanism in p--Si--n--(Si2)1--x(CdS)x Semiconductor Structures

    S.Z. Zaynabidinov, Kh. M. Madaminov

    ArticleIndustrial Engineering and TechnologiesHerald of the Bauman Moscow State Technical University Series Natural Sciences20202 citations
    ABI

  10. Semiconductor Physical Electronics

    Li, Sheng S

    Book20062 citations
    ABI