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Works cited by this work

43 works

Work: Current Transfer Mechanism in a Thin-Based Heterosystem Based on A2B6 Compounds

  1. Optical high harmonic generation in Dirac materials

    S. Rakhmanov, Kuvonchbek Matchonov, H. Yusupov +2

    ArticleLaser-Matter Interactions and ApplicationsThe European Physical Journal B202526 citations
    ABI

  2. Time of transition processes in a CdS-CIGS structural solar cells in the short-wave part of the absorption spectrum at different loading resistances

    R.R. Kabulov, Farrux Akbarov, Anvar Alimov

    ArticleChalcogenide Semiconductor Thin FilmsNanosystems Physics Chemistry Mathematics202320 citations
    ABI

  3. Second-harmonic generation in branched optical waveguides: Metric graphs based approach

    M. Akramov, B. Eshchanov, Sulton Usanov +2

    ArticleAdvanced Fiber Laser TechnologiesPhysics Letters A202419 citations
    ABI

  4. Injection photodiode based on an n-CdS/p-CdTe heterostructure

    Ш. А. Мирсагатов, R. R. Kabulov, M. A. Makhmudov

    ArticleChalcogenide Semiconductor Thin FilmsSemiconductors201319 citations
    ABI

  5. Statistics of the Recombinations of Holes and Electrons

    W. Shockley, W. T. Read

    Article195219 citations
    ABI

  6. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    ArticleAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State201216 citations
    ABI

  7. Injection photodiode based on p-CdTe film

    Ш. А. Мирсагатов, A.K. Uteniyazov

    ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters201211 citations
    ABI

  8. CdTe-based thin film photovoltaics: Recent advances, current challenges and future prospects

    Michael A. Scarpulla, Brian E. McCandless, Adam B. Phillips +22

    Article20239 citations
    ABI

  9. Mechanism of charge transfer in injection photodetectors based on the M(In)-n-CdS-p-Si-M(In) structure

    Ш. А. Мирсагатов, I. B. Sapaev

    ArticleSemiconductor materials and interfacesPhysics of the Solid State20158 citations
    ABI

  10. Fabrication and Properties of nSi–pCdTe Heterojunctions

    I.B. Sapaev, Ш. А. Мирсагатов, Б. Сапаев +1

    ArticleChalcogenide Semiconductor Thin FilmsInorganic Materials20208 citations
    ABI

  11. Some Properties of Semiconductor-Ferroelectric Structures

    Zakirjan Toxirovich Аzamatov, Sharifa B. Utamuradova, Murodjon A. Yuldoshev +1

    ArticleZnO doping and propertiesEast European Journal of Physics20237 citations
    ABI

  12. Transparent PT-symmetric nonlinear networks

    M. Akramov, Jambul Yusupov, Matthias Ehrhardt +2

    ArticleQuantum Mechanics and Non-Hermitian PhysicsPhysica Scripta20256 citations
    ABI

  13. Investigation of current-voltage characteristics of the n-CdS-p-CdTe structure with an extended layer of the intermediate solid solution

    Ш. А. Мирсагатов, A. Yu. Leĭderman, B. U. Aĭtbaev +1

    ArticleSilicon and Solar Cell TechnologiesPhysics of the Solid State20095 citations
    ABI

  14. Electrophysical and Photoelectric Properties of Injection Photodiode Based on pSi–nCdS–In Structure and Influence of Ultrasonic Irradiation on them

    Ш. А. Мирсагатов, I. B. Sapaev, Sh. R. Valieva +1

    Article20154 citations
    ABI

  15. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    ArticleSemiconductor materials and interfacesSemiconductors20184 citations
    ABI

  16. RESEARCH OF THE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF p-Si-n-(Si2)1 - x - y(Ge2)x(ZnSe)y-STRUCTURES ON TEMPERATURE

    А. С. Саидов, K. A. Amonov, Ada Yul'evna Leyderman

    ArticleSemiconductor materials and interfacesComputational nanotechnology20194 citations
    ABI

  17. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

    M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

    ArticleSemiconductor materials and interfacesPhysical Sciences and Technology20243 citations
    ABI

  18. Fabrication of CdS/CdTe-Based Thin Film Solar Cells Using an Electrochemical Technique

    I. M. Dharmadasa, Paul A. Bingham, O. K. Echendu +11

    Article20143 citations
    ABI

  19. Study of Optical, Electrophotographic and Holographic Parameters of As-Se Condensates from the Prehistory of the Original Bulk Materials

    Sharifa B. Utamuradova, Z. T. Azamatov, A I Popov +3

    ArticlePhase-change materials and chalcogenidesEast European Journal of Physics20242 citations
    ABI

  20. Polycrystalline CdSeTe/CdTe Absorber Cells With 28 mA/cm<sup>2</sup> Short-Circuit Current

    Amit Munshi, Jason M. Kephart, Ali Abbas +6

    Article20172 citations
    ABI

  21. Investigation of temporal characteristics of photosensitive heterostructures based on gallium arsenide and silicon

    F. A. Giyasova, Murodjon A. Yuldoshev

    Article20252 citations
    ABI

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    ABI

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    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI