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Works cited by this work

35 works

Work: Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

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  2. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

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  3. Short-channel effects in SOI MOSFETs

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  4. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

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  5. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

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  6. Optimization of vertically stacked nanosheet FET immune to self-heating

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  7. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    ArticleAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 citations
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  8. MOSFET scaling: Impact of two-dimensional channel materials

    R. Granzner, Zhansong Geng, W. Kinberger +1

    Article20164 citations
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  9. Interfacial heat transport across multilayer nanofilms in ballistic–diffusive regime

    Hafedh Belmabrouk, Houssem Rezgui, Faouzi Nasri +2

    Article20203 citations
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  10. Design optimization of nanoscale electrothermal transport in 10 nm SOI FinFET technology node

    Houssem Rezgui, Faouzi Nasri, Giovanni Nastasi +5

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  11. Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

    N. Loubet, Terence B. Hook, P. Montanini +61

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  12. Thermal conductivity of amorphous SiO2 thin film: A molecular dynamics study

    Wenhui Zhu, Guangping Zheng, Sen Cao +1

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  13. Dimensioning for power and performance under 10nm: The limits of FinFETs scaling

    M. Garcia Bardon, P. Schuddinck, Prasanth Raghavan +5

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  14. Exploring sub-20nm FinFET design with predictive technology models

    Saurabh Sinha, Greg Yeric, Vikas Chandra +2

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  15. Extreme scaling enabled by 5 tracks cells: Holistic design-device co-optimization for FinFETs and lateral nanowires

    M. Garcia Bardon, Yasser Sherazi, P. Schuddinck +14

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  16. Thermal conductivity and thermal boundary resistance of atomic layer deposited high-<i>k</i> dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon

    Ethan A. Scott, John T. Gaskins, Sean W. King +1

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  17. The last silicon transistor: Nanosheet devices could be the final evolutionary step for Moore's Law

    Peide D. Ye, T. Ernst, Mukesh Khare

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  18. Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET

    Sunil Rathore, Rajeewa Kumar Jaisawal, P. N. Kondekar +1

    Article20222 citations
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  19. Investigation of Analog/RF and linearity performance with self-heating effect in nanosheet FET

    Sunil Rathore, Rajeewa Kumar Jaisawal, P. N. Kondekar +1

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  20. Systematic performance benchmarking of nanosheet and FinFET: An intrinsic self-heating perspective

    Sunil Rathore, Rajeewa Kumar Jaisawal, Suneet Kumar Agnihotri +3

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  21. Nanoscale thermal transport

    David G. Cahill, W. K. Ford, Kenneth E. Goodson +5

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  22. Quantum capacitance devices

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  23. Analysis of Novel Core-Shell Junctionless Nanosheet FET for CMOS Logic Applications

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  24. Impact of the Self-Heating Effect on Nanosheet Field Effect Transistor Performance

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  25. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

    A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

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