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Technical Physics Letters

Работ: 356

Журнал · ISSN 1063-7850

  1. ActiveX control for a semiconductor plate in a waveguide

    E. O. Popov, S. O. Popov

    СтатьяPhotonic and Optical DevicesTechnical Physics Letters1997Цитирований: 0
    ABI

  2. Spatial anisotropy of anomalous acoustic damping and thermal conductivity in La2MCuO4 high-temperature superconductors

    S. V. Gushchin

    СтатьяPhysics of Superconductivity and MagnetismTechnical Physics Letters1997Цитирований: 0
    ABI

  3. Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures by submonolayer migration-stimulated epitaxy

    G. É. Cirlin, V. N. Petrov, S. A. Masalov +2

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0
    ABI

  4. Characteristic features of low-temperature gas-discharge plasma flows

    Andrea Bedin

    СтатьяPlasma and Flow Control in AerodynamicsTechnical Physics Letters1997Цитирований: 0
    ABI

  5. 2.2 μm cw single-mode diode lasers with thermoelectric cooling

    А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev

    СтатьяSpectroscopy and Laser ApplicationsTechnical Physics Letters1997Цитирований: 0
    ABI

  6. Photoluminescence properties of AlxGa1−xAs epitaxial layers grown under conditions of ultrafast flux cooling

    А. В. Абрамов, A. G. Deryagin, N. G. Deryagin +5

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0
    ABI

  7. Degenerate four-wave mixing spectroscopy excited by ultrashort laser pulses

    Alexander O. Morozov, Yu. A. Golikov, I. E. Mazets

    СтатьяSpectroscopy and Laser ApplicationsTechnical Physics Letters1997Цитирований: 0
    ABI

  8. IR-spectroscopic study of the deformation of alkane molecules on a metal surface at high temperature

    V. I. Vettegren, A. I. Tupitsyna

    Статьяthermodynamics and calorimetric analysesTechnical Physics Letters1997Цитирований: 0
    ABI

  9. Physicochemical mechanism for rearrangement of the shock wave structure in a decaying discharge plasma

    A. S. Baryshnikov

    СтатьяPlasma Applications and DiagnosticsTechnical Physics Letters1997Цитирований: 0
    ABI

  10. Investigation of spontaneous and coherent radiation in the 3–4 μm wavelength range in an InGaAsSb/AlGaSbAs laser heterostructure

    E. A. Grebenshchikova, O. G. Ershov, B. E. Zhurtanov +3

    СтатьяSemiconductor Lasers and Optical DevicesTechnical Physics Letters1997Цитирований: 0
    ABI

  11. Intense luminescence with a tunable wavelength from films of tetrahedral amorphous hydrogenated carbon on a fused quartz substrate

    M. E. Kompan, O. I. Kon’kov, Е. И. Теруков +2

    СтатьяPhotonic Crystals and ApplicationsTechnical Physics Letters1997Цитирований: 0
    ABI

  12. Operation of an electron interferometer with photon illumination of the biprism tip

    A. N. Ageev, Yu. M. Voronin, I. P. Demenchonok +1

    СтатьяAdvanced Measurement and Metrology TechniquesTechnical Physics Letters1997Цитирований: 0
    ABI

  13. Diffraction pattern of electrons scattered quasi-elastically by adsorbed fullerenes

    M. V. Gomoyunova, I. I. Pronin, N. S. Faradzhev

    СтатьяElectron and X-Ray Spectroscopy TechniquesTechnical Physics Letters1997Цитирований: 0
    ABI

  14. Influence of transient behavior on the determination of the energy confinement time in a tokamak

    M. V. Andreǐko, L. G. Askinazi, V.E. Golant +4

    СтатьяMagnetic confinement fusion researchTechnical Physics Letters1997Цитирований: 0
    ABI

  15. Investigation of implanted layers in silicon carbide by a modulation photoreflection method

    H. Walther, H. Karge, К. Л. Муратиков +2

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters1997Цитирований: 0
    ABI

  16. Simulation of iron fracture caused by a blast wave

    Anton V. Chizhov, V. O. Chistyakov, A. A. Schmidt

    СтатьяStructural Response to Dynamic LoadsTechnical Physics Letters1997Цитирований: 0
    ABI

  17. Three-dimensional lattice of parallel-oriented tellurium nanoclusters in an opal matrix

    V. N. Bogomolov, L. M. Sorokin

    СтатьяMineralogy and Gemology StudiesTechnical Physics Letters1997Цитирований: 0
    ABI

  18. Properties of the electron channel in single GaInAsSb/p-InAs heterostructures

    T. I. Voronina, T. S. Lagunov, M. P. Mikhaĭlova +4

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0
    ABI

  19. Electroluminescence induced by synchronous sinusoidal variations of the electric field and uniaxial mechanical stress in a lead magnesium niobate relaxor ferroelectric

    N. N. Kraǐnik, S. A. Popov, S. A. Sushko +1

    СтатьяFerroelectric and Piezoelectric MaterialsTechnical Physics Letters1997Цитирований: 0
    ABI

  20. Subhomogeneous spectroscopy of a Bose condensate of neutral atoms

    I. E. Mazets, B. G. Matisov

    СтатьяCold Atom Physics and Bose-Einstein CondensatesTechnical Physics Letters1997Цитирований: 0
    ABI

  21. Maximum information capacity of a three-dimensional hologram

    Yu. I. Kuz’min

    СтатьяAdvanced Optical Imaging TechnologiesTechnical Physics Letters1997Цитирований: 0
    ABI

  22. Influence of moisture on the properties of long streamers in air

    N. L. Aleksandrov, É. M. Bazelyan, D. A. Novitskii

    СтатьяPlasma Applications and DiagnosticsTechnical Physics Letters1998Цитирований: 0
    ABI

  23. Determination of the electron density in a discharge with nonmetallic liquid electrodes in atmospheric-pressure air from the absorption of microwave probe radiation

    Yu. A. Barinov, V. B. Kaplan, V. V. Rozhdestvenskiǐ +1

    СтатьяPlasma Applications and DiagnosticsTechnical Physics Letters1998Цитирований: 0
    ABI

  24. Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm

    V. M. Ustinov, A. R. Kovsh, A. E. Zhukov +9

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0
    ABI

  25. Mechanism of field-enhanced self-sustaining secondary electron emission in porous dielectrics

    Polad M. Shikhaliev

    СтатьяSemiconductor materials and devicesTechnical Physics Letters1998Цитирований: 0
    ABI