Работы, цитирующие эту работу

Работ: 9

Работа: Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

1. Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

   Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

   СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.002944

2. Morphological Studies of (Ge2)1-X(ZnSe)X Solid Solutions

   A.Sh. Razzokov, А. С. Саидов, M.A. Shonazarova +2

   СтатьяPhase-change materials and chalcogenidesEast European Journal of Physics2025Цитирований: 1

   ABIABI:AkademIndex/openalex/2025.article.002039

3. Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon

   Н. Ф. Зикриллаев, S. Koveshnikov, Kh. S. Turekeev +2

   СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.002687

4. Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon

   Н. Ф. Зикриллаев, S. Koveshnikov, Kh.S. Turekeev Kh. S. +2

   СтатьяSemiconductor materials and interfacesФизика твердого тела2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.010395

5. Investigation of the Features of the Thermovoltaic Effect in GaSb, GaAs and GaP Binary Compounds

   А. С. Саидов, Sh. N. Usmonov, O. Z. Turgunov

   СтатьяSemiconductor materials and interfacesApplied Solar Energy2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.012611

6. Technology for obtaining VO2 films from the gas phase during thermal decomposition

   M.Z. Sharipov, J O Urinov, J R Kilichov +2

   СтатьяTransition Metal Oxide NanomaterialsJournal of Physics Conference Series2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.004625

7. Composition of silicon jointly doped with impurity atoms of gallium and phosphorus

   Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

   СтатьяSilicon and Solar Cell TechnologiesПоверхность Рентгеновские синхротронные и нейтронные исследования2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.007427

8. Physical and Magnetic Properties of Silicon Doped with Impurity Germanium Atoms

   N. F. Zikrillayev, F. E. Urakova, A. Toshev +4

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.003073

9. Photovoltaic Cells Based on Silicon with Binary Compounds GexSi1–x

   Н. Ф. Зикриллаев, Kh. F. Zikrillaev, F. E. Urakova +4

   СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.005819