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Работы, на которые ссылается эта работа

Работ: 17

Работа: Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

  1. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    СтатьяSemiconductor materials and devicesTechnical Physics Letters2018Цитирований: 6
    ABI

  2. Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon

    A. É. Atamuratov, А. Yusupov, Khidir A. Adinaev

    СтатьяAdvanced Energy Technologies and Civil Engineering InnovationsInorganic Materials2001Цитирований: 5
    ABI

  3. Charge storage in a nitride-oxide-silicon medium by scanning capacitance microscopy

    R. C. Barrett, C. F. Quate

    Статья1991Цитирований: 5
    ABI

  4. Impact of Off-State Stress and Negative Bias Temperature Instability on Degradation of Nanoscale pMOSFET

    Nam-Hyun Lee, Hyung-wook Kim, Bongkoo Kang

    Статья2011Цитирований: 4
    ABI

  5. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

    A. É. Atamuratov, Ahmed Yusupov, Zamira Atamuratova +2

    СтатьяSemiconductor materials and devicesApplied Sciences2020Цитирований: 3
    ABI

  6. Method to predict length dependency of negative bias temperature instability degradation in p-MOSFETs

    Jihoon Seo, Gang-Jun Kim, Donghee Son +3

    Статья2016Цитирований: 3
    ABI

  7. Effect of oxide-trapped charge on the anomalous drain avalanche hot carrier degradation of a SiO2 dielectric nMOSFET

    Yeohyeok Yun, Jihoon Seo, Young-Kyu Kwon +1

    Статья2019Цитирований: 3
    ABI

  8. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

    A. É. Atamuratov, Zamira Atamuratova, А. Yusupov +1

    СтатьяSemiconductor materials and devicesResults in Physics2018Цитирований: 3
    ABI

  9. Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

    Zamira Atamuratova, А. Yusupov, B. O. Khalikberdiev +1

    СтатьяSemiconductor materials and devicesTechnical Physics2019Цитирований: 3
    ABI

  10. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

    Lewis M. Terman

    Статья1962Цитирований: 3
    ABI

  11. A propagation concept of negative bias temperature instability along the channel length in p-type metal oxide field effect transistor

    Boualem Djezzar, Hakim Tahi, Abdelmadjid Benabdelmoumene +1

    Статья2013Цитирований: 2
    ABI

  12. Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETs

    Souvik Mahapatra, C.D. Parikh, V. Ramgopal Rao +2

    Статья2000Цитирований: 2
    ABI

  13. Method to estimate profile of threshold voltage degradation in MOSFETs due to electrical stress

    Yeohyeok Yun, Jihoon Seo, Donghee Son +1

    Статья2018Цитирований: 2
    ABI

  14. Correlating the Radiation Response of MOS Capacitors and Transistors

    P.S. Winokur, J.R. Schwank, P. J. McWhorter +2

    Статья1984Цитирований: 2
    ABI

  15. A reliable approach to charge-pumping measurements in MOS transistors

    G. Groeseneken, H.E. Maes, N. Beltran +1

    Статья1984Цитирований: 2
    ABI

  16. Без названия

    ДругоеЦитирований: 1
    ABI

  17. Без названия

    ДругоеЦитирований: 1
    ABI