Работы, цитирующие эту работу

Работ: 9

Работа: Modeling and calibration of electrical features of p-n junctions based on Si and GaAs

1. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

   Jo`shqin Abdullayev, I. B. Sapaev

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 7

   ABIABI:AkademIndex/openalex/2025.article.000607

2. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

   Jo`shqin Abdullayev

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 7

   ABIABI:AkademIndex/openalex/2025.article.000647

3. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

   Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 5

   ABIABI:AkademIndex/openalex/2025.article.000840

4. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

   Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 5

   ABIABI:AkademIndex/openalex/2025.article.000841

5. Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects

   Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +3

   СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2025Цитирований: 2

   ABIABI:AkademIndex/openalex/2025.article.001352

6. Temperature Response Curve of Silicon Diode Temperature Sensors

   Damir Istamov, O. A. Abdulkhaev, Shukurullo M. Kuliyev +3

   СтатьяAdvanced MEMS and NEMS TechnologiesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009033

7. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

   J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

   СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.000556

8. Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

   Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3

   СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.002954

9. Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

   J. Sh. Abdullayev, Dildora Qalandarova, M. Sh. Ibragimova

   СтатьяSilicon and Solar Cell TechnologiesLow Temperature Physics2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.003469