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Работы, на которые ссылается эта работа

Работ: 26

Работа: Influence of Temperature on Characteristics of a Diode with a p-n Junction in a Magnetic Field

  1. The Temperature Dependence of the Density of States in Semiconductors

    G. Gulyamov, Nosir Yusupjanovich Sharibaev, Ulugbek Inoyatillaevich Erkaboev

    СтатьяAdvanced Semiconductor Detectors and MaterialsWorld Journal of Condensed Matter Physics2013Цитирований: 9
    ABI

  2. Peculiarities of the Temperature Dependence of the Chemical Potential of a Two-dimensional Electron Gas in Magnetic Field

    B. T. Abdulazizov, G. Gulyamov, P. J. Baymatov +3

    СтатьяQuantum and electron transport phenomenaSPIN2022Цитирований: 8
    ABI

  3. EMF Induced in a p–n Junction under a Strong Microwave Field and Light

    G. Gulyamov, У. И. Эркабоев, N. Yu. Sharibaev +1

    СтатьяMechanical and Optical ResonatorsSemiconductors2019Цитирований: 7
    ABI

  4. Influence of deformation and light on the diffusion capacity and differential resistance of the p-n junction of a strong electromagnetic field

    G. Gulyamov, M. G. Dadamirzayev, M. O. Qosimova +1

    СтатьяSilicon and Solar Cell TechnologiesAIP conference proceedings2023Цитирований: 5
    ABI

  5. Influence of Microwave and Magnetic Fields on the Electrophysical Parameters of a Tunnel Diode

    Paul R. Berger, G. Gulyamov, М. Г. Дадамирзаев +2

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignRomanian Journal of Physics2024Цитирований: 4
    ABI

  6. EMF of Hot Charge Carriers Arising at the p-n-Junction under the Influence of the Microwave Field and Light

    G. Gulyamov, М. Г. Дадамирзаев, Nosir Yusupjanovich Sharibayev +1

    СтатьяSolid-state spectroscopy and crystallographyJournal of Electromagnetic Analysis and Application2015Цитирований: 3
    ABI

  7. Changes in diodes with a p-n-transition under the influence of microwave radiation

    G. Gulyamov, Gulnoza Majidova, Feruza Muxitdinova +1

    СтатьяSemiconductor Quantum Structures and DevicesAIP conference proceedings2023Цитирований: 3
    ABI

  8. Changing the Voltage of the p-n Junction in a Magnetic Field

    G. Gulyamov, Feruza Mukhitdinova, Gulnoza Majidova

    СтатьяSemiconductor Quantum Structures and Devicese-Journal of Surface Science and Nanotechnology2023Цитирований: 2
    ABI

  9. Change in the quasi-Fermi level and current - Voltage characteristics of diodes with a p-n junction under the action of light and deformation

    G. Gulyamov, Bahodir Shahobiddinov, Alisher Z. Soliyev +2

    СтатьяSemiconductor materials and interfacesAIP conference proceedings2023Цитирований: 2
    ABI

  10. Current–voltage characteristics of manganite–titanite perovskite junctions

    Benedikt Ifland, Patrick Peretzki, Birte Kressdorf +4

    Статья2015Цитирований: 2
    ABI

  11. Bipolar-driven large linear magnetoresistance in silicon at low magnetic fields

    Michael P. Delmo, Eiji Shikoh, Teruya Shinjo +1

    Статья2013Цитирований: 2
    ABI

  12. Geometrical enhancement of low-field magnetoresistance in silicon

    Caihua Wan, Xiaozhong Zhang, Xili Gao +2

    Статья2011Цитирований: 2
    ABI

  13. A Large Magnetoresistance Effect in p–n Junction Devices by the Space‐Charge Effect

    Dezheng Yang, Fangcong Wang, Yang Ren +4

    Статья2013Цитирований: 2
    ABI

  14. Electrical spin extraction and giant positive junction magnetoresistance in a Fe<sub>3</sub>O<sub>4</sub>/MgO/n-Si magnetic diode like heterostructure

    J. Panda, Progna Banerjee, T. K. Nath

    Статья2014Цитирований: 2
    ABI

  15. Angular dependence of the magnetoresistance effect in a silicon based p–n junction device

    Tao Wang, Mingsu Si, Dezheng Yang +5

    Статья2014Цитирований: 2
    ABI

  16. Magnetoresistance Amplification Effect in Silicon Transistor Device

    Tao Wang, Dezheng Yang, Mingsu Si +3

    Статья2016Цитирований: 2
    ABI

  17. Magnetic field controlled hybrid semiconductor and resistive switching device for non-volatile memory applications

    Chengyue Xiong, Ziyao Lu, Siqi Yin +2

    Статья2019Цитирований: 2
    ABI

  18. Light-Induced-Magnetoresistance in <i>p-n</i> Junction Device

    Yang Cao, Wenbo Sui, Tao Wang +4

    Статья2020Цитирований: 2
    ABI

  19. Magnetically enhanced photoconductive high voltage control

    Gareth J. Monkman, Dirk Sindersberger, Nina Prem

    Статья2022Цитирований: 2
    ABI

  20. Без названия

    ДругоеЦитирований: 1
    ABI

  21. Без названия

    ДругоеЦитирований: 1
    ABI

  22. Без названия

    ДругоеЦитирований: 1
    ABI

  23. Без названия

    ДругоеЦитирований: 1
    ABI

  24. Без названия

    ДругоеЦитирований: 1
    ABI

  25. Без названия

    ДругоеЦитирований: 1
    ABI