Работы, на которые ссылается эта работа

Работ: 23

Работа: Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures
Jo`shqin Abdullayev, I. B. Sapaev
СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2024Цитирований: 14
ABI
OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES
Jo`shqin Abdullayev, I. B. Sapaev
Статья2024Цитирований: 13
ABI
Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors
Renan Trevisoli, Rodrigo T. Doria, Michelly de Souza +3
Статья2012Цитирований: 11
ABI
An Explicit Quantum-Mechanical Compact Model for the <italic>I-V</italic> Characteristics of Cylindrical Nanowire MOSFETs
Regiane Ragi, Rafael Nobrega, Ulysses Rondina Duarte +1
Статья2016Цитирований: 11
ABI
Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures
Jo`shqin Abdullayev, I. B. Sapaev
СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 10
ABI
Fabrication and studies on Si/InP core-shell nanowire based solar cell using etched Si nanowire arrays
Biswajit Pal, Kalyan Jyoti Sarkar, P. Banerji
Статья2019Цитирований: 10
ABI
Some Electrophysical Properties of Polycrystalline Silicon Obtained in a Solar Oven
L. O. Olimov, Iqboljon Ibroximovich Anarboyev
СтатьяSilicon Nanostructures and PhotoluminescenceSilicon2022Цитирований: 10
ABI
Influence of the parameters to transition capacitance at NCDS-PSI heterostructure
I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5
СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 9
ABI
Modeling and calibration of electrical features of p-n junctions based on Si and GaAs
Jo`shqin Abdullayev, I. B. Sapaev
СтатьяSemiconductor materials and interfacesPhysical Sciences and Technology2024Цитирований: 9
ABI
Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures
Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev
СтатьяSemiconductor Quantum Structures and DevicesLow Temperature Physics2025Цитирований: 9
ABI
Model of the grain boundary in p-n structures based on polycrystalline semiconductors
L. O. Olimov
Статья2010Цитирований: 9
ABI
Electrical and optical properties of nanowires based solar cell with radial p-n junction
O. V. Pylypova, А.А. Еvtukh, P.V. Parfenyuk +4
Статья2019Цитирований: 8
ABI
Adsorption of alkali metals and their effect on electronic properties of grain boundaries in bulk of polycrystalline silicon
L. O. Olimov
СтатьяThin-Film Transistor TechnologiesSemiconductors2010Цитирований: 8
ABI
Controlled Doping Methods for Radial p/n Junctions in Silicon
Rick Elbersen, Roald M. Tiggelaar, Alexander Milbrat +3
Статья2014Цитирований: 7
ABI
Optical and electrical modeling of solar cells based on graphene/Si nanowires with radial p–i–n junctions
Zahra Arefinia, Asghar Asgari
Статья2015Цитирований: 7
ABI
Effect of alkali metals on the electronic properties of grain boundaries on a polycrystalline silicon surface
L. O. Olimov
СтатьяSilicon and Solar Cell TechnologiesSemiconductors2012Цитирований: 7
ABI
High efficiency silicon solar cell based on asymmetric nanowire
Myung-Dong Ko, Taiuk Rim, Ki‐Hyun Kim +2
Статья2015Цитирований: 6
ABI
Theory of the Junctionless Nanowire FET
Elena Gnani, A. Gnudi, Susanna Reggiani +1
Статья2011Цитирований: 6
ABI
Analytical modelling and device design optimisation of epitaxial layer‐based III–V tunnel FET
Prabhat Kumar Dubey, Brajesh Kumar Kaushik, Eddy Simoen
Статья2019Цитирований: 6
ABI
Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs
Adelcio M. de Souza, Daniel R. Celino, Regiane Ragi +1
Статья2021Цитирований: 6
ABI
Si microwire-array solar cells
Morgan C. Putnam, Shannon W. Boettcher, Michael D. Kelzenberg +6
Статья2010Цитирований: 5
ABI
Influence of alkali metals on electrical resistance of poly-Si structures for solar cells
L. O. Olimov
СтатьяThin-Film Transistor TechnologiesApplied Solar Energy2008Цитирований: 4
ABI
Mechanism of thermoelectric material efficiency increase
Iqboljon Anarboyev, L. O. Olimov
СтатьяAdvanced Thermoelectric Materials and DevicesAIP conference proceedings2024Цитирований: 2
ABI