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Работы, на которые ссылается эта работа

Работ: 16

Работа: Thermal stability parameters of silicon doped with nickel impurity atoms

  1. Nickel: A very fast diffuser in silicon

    Jeanette Lindroos, David P. Fenning, D. J. Backlund +5

    Статья2013Цитирований: 17
    ABI

  2. Radiation Stability of Nickel Doped Solar Cells

    К. А. Исмайлов, Z. T. Kenzhaev, S. Koveshnikov +2

    СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2022Цитирований: 9
    ABI

  3. Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon

    М. К. Бахадырханов, B. K. Ismaylov, С. А. Тачилин +2

    Статья2020Цитирований: 9
    ABI

  4. Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon

    B. K. Ismaylov, N. F. Zikrillayev, К. А. Исмайлов +1

    СтатьяMaterial Science and ThermodynamicsPhysical Sciences and Technology2023Цитирований: 7
    ABI

  5. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

    Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

    СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 6
    ABI

  6. Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon

    Z.M. Saparniyazova, М. К. Бахадырханов, О. Э. Саттаров +4

    СтатьяSemiconductor materials and interfacesInorganic Materials2012Цитирований: 5
    ABI

  7. Development of an educational simulator’s working logic for the course “fundamentals of power supply”

    Mirkomil Melikuziev, Zarina Fayzrakhmanova, Anvar Akhmedov +1

    СтатьяEngineering and Agricultural InnovationsAIP conference proceedings2024Цитирований: 5
    ABI

  8. Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon

    К. А. Исмайлов, X. M. Iliev, M. O. Tursunov +1

    Статья2021Цитирований: 5
    ABI

  9. Issues of the design procedure for the power supply system

    Mirkomil Melikuziev, Saidbek Usmonaliev, Nodirbek Khudoyberdiev +2

    СтатьяEngineering and Agricultural InnovationsAIP conference proceedings2024Цитирований: 4
    ABI

  10. Suppression of harmful impurity atoms with clusters of nickel impurity atoms in a silicon lattice

    Ismaylov Bayrambay, Ismailov Kanatbay, Kamalov Khayratdin +1

    СтатьяSilicon and Solar Cell TechnologiesAIP conference proceedings2023Цитирований: 4
    ABI

  11. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

    M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

    СтатьяSemiconductor materials and interfacesPhysical Sciences and Technology2024Цитирований: 3
    ABI

  12. X-ray beam induced current—a synchrotron radiation based technique for the <i>in situ</i> analysis of recombination properties and chemical nature of metal clusters in silicon

    О. Ф. Вывенко, Tonio Buonassisi, A. A. Istratov +4

    Статья2002Цитирований: 3
    ABI

  13. Effect of ultrasound treatment on the electro-physical properties of the structure of Al-Al2O3-p-CdTe

    A.K. Uteniazov

    Статья2019Цитирований: 3
    ABI

  14. Physical mechanism of gettering of impurity Ni atom clusters in Si lattice

    B. K. Ismaylov, N. F. Zikrillayev, К. А. Исмайлов +1

    Статья2024Цитирований: 3
    ABI

  15. The Physical mechanisms of gettering properties of nickel clusters in silicon solar cells

    Zoir Kenjayev, Khalmurat Iliev, Kanatbay A. Ismailov +4

    СтатьяSilicon and Solar Cell TechnologiesPhysical Sciences and Technology2024Цитирований: 2
    ABI

  16. Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

    Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 1
    ABI