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Работы, цитирующие эту работу

Работ: 12

Работа: Estimation of changes in parameters of a crystal lattice and energy bands upon variation in the size of nanocrystals and nanofilms of silicides prepared by ion implantation

  1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2015Цитирований: 23
    ABI

  2. On the synthesis of nanoscale phases of metal silicides in the near-surface region of silicon and the study of their electronic structures by passing light

    Y. S. Ergashov, Д. А. Ташмухамедова, Б. Е. Умирзаков

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 21
    ABI

  3. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

    Б. Е. Умирзаков, Д. А. Ташмухамедова, D. M. Muradkabilov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics2013Цитирований: 19
    ABI

  4. Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment

    Y. S. Ergashov

    СтатьяElectron and X-Ray Spectroscopy TechniquesTechnical Physics2017Цитирований: 14
    ABI

  5. Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing

    Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2014Цитирований: 14
    ABI

  6. Applying low-energy ion implantation in the creation of nanocontacts on the surface of ultrathin semiconductor films

    D. M. Muradkabilov, Д. А. Ташмухамедова, Б. Е. Умирзаков

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2013Цитирований: 14
    ABI

  7. Composition and Structure of a Nanofilm Multilayer System of the SiO2/Si/CoSi2/Si(111) Type Obtained via Ion Implantation

    Y. S. Ergashov, Б. Е. Умирзаков

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2018Цитирований: 8
    ABI

  8. Emission and optical properties of SiO2/Si thin films

    Д. А. Ташмухамедова, M. B. Yusupjanova

    СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2016Цитирований: 6
    ABI

  9. Analyzing the Change in the Composition of a CdTe Surface upon Implanting $$O_{2}^{ + }$$ Ions and Subsequent Annealing

    A. A. Abduvayitov, Kh. Kh. Boltaev, Б. Е. Умирзаков +2

    СтатьяAdvanced Semiconductor Detectors and MaterialsBulletin of the Russian Academy of Sciences Physics2024Цитирований: 1
    ABI

  10. Estimation of the sizes of disordered surface regions of Cu and Ag thin films using the ion transmission method

    З. А. Исаханов, Б. Е. Умирзаков, М. К. Рузибаева +2

    СтатьяCopper Interconnects and ReliabilityJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2013Цитирований: 0
    ABI

  11. Effect of the Angle of Incidence of Low-Energy Ar+ Ion Beams on the Composition and Structure of the GaAs Surface

    Д. А. Ташмухамедова, Б. Е. Умирзаков, Z. A. Tursunmetova

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 0
    ABI

  12. Influence of Implantation of Active Metal Ions on the Composition, Emission and Optical Properties of MgO Films

    Maxsuna Yusupjonova, Д. А. Ташмухамедова, Б. Е. Умирзаков +3

    СтатьяZnO doping and propertiesEast European Journal of Physics2025Цитирований: 0
    ABI