Работы, цитирующие эту работу

Работ: 5

Работа: Semiconductor Surfaces and Interfaces

1. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

   Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +3

   СтатьяMetal and Thin Film MechanicsTechnical Physics2013Цитирований: 15

   ABIABI:AkademIndex/openalex/2026.other.222446

2. Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

   Б. Е. Умирзаков, Д. А. Ташмухамедова, E.U. Boltaev +1

   СтатьяSemiconductor materials and interfacesMaterials Science and Engineering B2003Цитирований: 14

   ABIABI:AkademIndex/openalex/2003.article.000028

3. Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment

   Y. S. Ergashov

   СтатьяElectron and X-Ray Spectroscopy TechniquesTechnical Physics2017Цитирований: 14

   ABIABI:AkademIndex/openalex/2026.other.104962

4. Properties of Passivating Coatings Based on Lead Borosilicate Glass

   П. Б. Парчинский, С. И. Власов, U. T. Turgunov

   СтатьяGlass properties and applicationsInorganic Materials2002Цитирований: 6

   ABIABI:AkademIndex/openalex/2002.article.000077

5. Slowly relaxing charge in lead borosilicate glass passive coatings studied by isothermal capacitance relaxation

   П. Б. Парчинский, С. И. Власов, Aslan Nasirov

   СтатьяSemiconductor materials and devicesTechnical Physics Letters2001Цитирований: 0

   ABIABI:AkademIndex/openalex/2001.article.000256