Работы, цитирующие эту работу

Работ: 7

Работа: Impurities and point defects in semiconductors

1. Bulk Si1−xGex single- and poly-crystals: a new prospective material for electronics

   I. G. Atabaev

   СтатьяSemiconductor materials and interfacesComputational Materials Science2001Цитирований: 3

   ABIABI:AkademIndex/openalex/2001.article.000189

2. Carrier transport in a diode base with locally nonuniform recombination properties

   А. В. Иванов, N. B. Strokan, V. B. Shuman

   СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters1997Цитирований: 1

   ABIABI:AkademIndex/openalex/1997.article.000150

3. Elementally specific electron–positron annihilation radiation emitted from ion cores of group-V impurity–vacancy complexes in germanium

   N.Yu. Arutyunov, V. V. Emtsev

   СтатьяMuon and positron interactions and applicationsPhysica B Condensed Matter2007Цитирований: 1

   ABIABI:AkademIndex/openalex/2007.article.000201

4. Positron annihilation on defects in silicon irradiated with 15 MeV protons

   N.Yu. Arutyunov, Mohamed Elsayed, R. Krause‐Rehberg +3

   СтатьяMuon and positron interactions and applicationsJournal of Physics Condensed Matter2012Цитирований: 1

   ABIABI:AkademIndex/openalex/2012.article.000064

5. Dependence of the divacancy concentration on the germanium content in p-Si1 − x Ge x (0 < x < 0.10) alloys irradiated with 5-MeV electrons

   N. A. Matchanov

   СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2007Цитирований: 0

   ABIABI:AkademIndex/openalex/2007.article.000331

6. Positron probing of gamma-irradiated Ge doped with P, As, Sb, and Bi: Changes in atomic structures of defects due to n→p conversion

   N.Yu. Arutyunov, V. V. Emtsev

   СтатьяMuon and positron interactions and applicationsPhysica B Condensed Matter2009Цитирований: 0

   ABIABI:AkademIndex/openalex/2009.article.000269

7. Features of the Formation of Impurity-Defective Centers in Silicon Doped with Chromium

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Yuldoshali Ravshanov +30

   СтатьяSilicon and Solar Cell TechnologiesInternational Journal of Emerging Trends in Engineering Research2020Цитирований: 0

   ABIABI:AkademIndex/openalex/2020.article.005153