Работы, цитирующие эту работу

Работ: 5

Работа: Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

1. Structural Peculiarities of the (ZnSe)1 – x – y(Ge2)x(GaAs1 – δBiδ)y Solid Solution with Various Nanoinclusions

   С. З. Зайнабидинов, Sharifa B. Utamuradova, Akramjon Y. Boboev

   СтатьяChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2022Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.238423

2. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

   С. З. Зайнабидинов, А. С. Саидов, M. U. Kalanov +1

   СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 2

   ABIABI:AkademIndex/openalex/2019.article.000285

3. Structure, Morphology and Photoelectric Properties of n-GaAs--p-(GaAs)1--x(Ge2)х Heterostructure

   S.Z. Zaynabidinov, А. С. Саидов, Akramjon Y. Boboev +1

   СтатьяSemiconductor materials and interfacesHerald of the Bauman Moscow State Technical University Series Natural Sciences2022Цитирований: 2

   ABIABI:AkademIndex/openalex/2022.article.001009

4. Influence of Germanium and Zinc Selenium Nanocrystals on the Photoelectric Properties of the n-GaAs – p-(GaAs)0.69(Ge2)0.17(ZnSe)0.14 Heterostructure

   С. З. Зайнабидинов, Akramjon Y. Boboev, Jakhongir N. Usmonov

   СтатьяSemiconductor materials and interfacesAlternative Energy and Ecology (ISJAEE)2019Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.386220

5. Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase

   А. С. Саидов, Shukrullo Usmonov, D. V. Saparov +4

   СтатьяGaN-based semiconductor devices and materialsAIP conference proceedings2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.009139