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Работы, цитирующие эту работу

Работ: 6

Работа: Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

  1. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    ПрепринтAdvancements in Semiconductor Devices and Circuit Design2021Цитирований: 6
    ABI

  2. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2021Цитирований: 5
    ABI

  3. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

    M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2019Цитирований: 2
    ABI

  4. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

    A.E. Atamuratov, B.O. Jabbarova, M. M. Khalilloev +3

    СтатьяSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics2022Цитирований: 2
    ABI

  5. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

    СтатьяSemiconductor materials and devicesApplied Sciences2020Цитирований: 2
    ABI

  6. Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +2

    СтатьяAdvancements in Semiconductor Devices and Circuit Designe-Journal of Surface Science and Nanotechnology2021Цитирований: 0
    ABI