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Работы, цитирующие эту работу

Работ: 9

Работа: Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

  1. The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

    Marat S. Yunusov, M. Kаrimov, M. N. Alkulov +1

    СтатьяSilicon and Solar Cell TechnologiesRadiation effects and defects in solids2000Цитирований: 3
    ABI

  2. Capacitive Spectroscopy of Deep Levels in Silicon with Samarium Impurity

    Sharifa B. Utamuradova, Khojakbar S. Daliev, Shakhrukh Kh. Daliev +1

    СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 2
    ABI

  3. Interaction of deep impurities with radiation defects in n-Si at γ-irradiation

    Sh. Makhkamov, M. Kаrimov, Z. M. Khakimov +4

    СтатьяSilicon and Solar Cell TechnologiesRadiation effects and defects in solids2005Цитирований: 2
    ABI

  4. Deep Level Transient Spectroscopy of Silicon, Doped by Zirconium

    Shakhrukh Kh. Daliev

    СтатьяIon-surface interactions and analysisInternational Journal for Research in Applied Science and Engineering Technology2018Цитирований: 1
    ABI

  5. Influence of the Post-Diffusion Hardening Rate and Thermal Treatment on the Thermal Stability of the Charge-Carrier Lifetime in Overcompensated n-Si<B, S>

    M. Kаrimov, A. K. Karakhodzhaev

    СтатьяSemiconductor materials and interfacesRussian Physics Journal2001Цитирований: 0
    ABI

  6. The effect of thermal treatment on the charge-carrier lifetime in nickel-doped silicon

    M. Kаrimov, A. O. Kurbanov, С. З. Зайнабидинов +1

    СтатьяSilicon and Solar Cell TechnologiesRussian Physics Journal2006Цитирований: 0
    ABI

  7. Features of the Formation of Impurity-Defective Centers in Silicon Doped with Chromium

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Yuldoshali Ravshanov +30

    СтатьяSilicon and Solar Cell TechnologiesInternational Journal of Emerging Trends in Engineering Research2020Цитирований: 0
    ABI

  8. EFFECT OF TEMPERATURE TREATMENT ON THE ENERGY SPECTRUM OF DEFECTS IN SILICON DOPED WITH MOLYBDENUM

    Kh.S. Daliev, Anifa Paluanova

    СтатьяAdvanced Materials and Semiconductor TechnologiesEurasianUnionofScientists2021Цитирований: 0
    ABI

  9. Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals

    Kh.S. Daliev, Sharifa B. Utamuradova, Shakhrukh Kh. Daliev +2

    СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2025Цитирований: 0
    ABI