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Работы, на которые ссылается эта работа

Работ: 19

Работа: Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

  1. Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation

    S. B. Donaev, Flyura Djurabekova, Д. А. Ташмухамедова +1

    СтатьяIon-surface interactions and analysisPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics2014Цитирований: 20
    ABI

  2. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

    З. А. Исаханов, Z. E. Mukhtarov, Б. Е. Умирзаков +1

    СтатьяIon-surface interactions and analysisTechnical Physics2011Цитирований: 19
    ABI

  3. Electronic structure and optical properties of CaF2 films under low energy Ba+ ion-implantation combined with annealing

    Б. Е. Умирзаков, T.S. Pugacheva, A.T. Tashatov +1

    СтатьяInorganic Fluorides and Related CompoundsNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2000Цитирований: 16
    ABI

  4. Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing

    Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2014Цитирований: 14
    ABI

  5. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

    S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

    СтатьяIon-surface interactions and analysisTechnical Physics2015Цитирований: 13
    ABI

  6. Investigation of change of the composition and structure of the CaF2/Si films surface at the low-energy bombardment

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +2

    СтатьяSilicon Nanostructures and PhotoluminescenceNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2014Цитирований: 13
    ABI

  7. Electronic and Optical Properties of GaAlAs/GaAs Thin Films

    Б. Е. Умирзаков, S. B. Donaev, N. M. Mustafaeva

    СтатьяPhotocathodes and Microchannel PlatesTechnical Physics2019Цитирований: 8
    ABI

  8. Superstructured ordering in Al x Ga1 − x As and Ga x In1 − x P alloys

    П. В. Середин, �. P. Domashevskaya, I. N. Arsentyev +3

    Статья2013Цитирований: 6
    ABI

  9. Formation of defects in GaAs and Si as a result of Pd deposition onto the surface

    И. А. Карпович, С. В. Тихов, E. L. Shobolov +1

    Статья2006Цитирований: 4
    ABI

  10. Effect of thermal processing on the structure and optical properties of crystalline silicon with GaSb nanocrystals formed with the aid of high-doze ion implantation

    Ф. Ф. Комаров, G. A. Ismailova, O. V. Milchanin +3

    Статья2015Цитирований: 3
    ABI

  11. Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results

    А. Ф. Комаров, Ф. Ф. Комаров, O. V. Milchanin +5

    Статья2015Цитирований: 3
    ABI

  12. The structure of porous gallium phosphide

    T. N. Zavaritskaya, A. Kvit, N. N. Melnik +1

    Статья1998Цитирований: 3
    ABI

  13. Theory of electronic structure evolution in GaAsN and GaPN alloys

    Paul R. C. Kent, Alex Zunger

    Статья2001Цитирований: 3
    ABI

  14. Solar cell efficiency tables (version 49)

    Martin A. Green, Keith Emery, Yoshihiro Hishikawa +4

    Статья2016Цитирований: 3
    ABI

  15. A Lightweight Flexible Solar Cell Based on a Heteroepitaxial InGaP/GaAs Structure

    М. А. Putyato, N. A. Valisheva, М. О. Петрушков +8

    Статья2019Цитирований: 3
    ABI

  16. Trapping of charge carriers into InAs/AlAs quantum dots at liquid-helium temperature

    D. S. Abramkin, К. С. Журавлев, Т. С. Шамирзаев +2

    Статья2011Цитирований: 2
    ABI

  17. Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment

    V. F. Agekyan, V. I. Ivanov-Omskiĭ, V. N. Knyazevskii +2

    Статья1998Цитирований: 2
    ABI

  18. Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrix

    Oleg I. Rumyantsev, P. N. Brunkov, E. V. Pirogov +1

    Статья2010Цитирований: 2
    ABI

  19. Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide

    Aleksey Mikhaylov, Alexey V. Afanasyev, Vladimir A. Ilyin +5

    Статья2016Цитирований: 2
    ABI