Работы, цитирующие эту работу

Работ: 2

Работа: Physicochemical interaction at the MnSi1.71–1.75/Mo interface

1. Electron microscopy characterization of higher manganese silicide film structure on silicon

   Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

   СтатьяSemiconductor materials and interfacesNanotechnologies in Russia2016Цитирований: 7

   ABIABI:AkademIndex/openalex/2026.other.079735

2. On the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing

   А.С. Рысбаев, M. T. Normurodov, J. B. Khujaniyozov +2

   СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.297468