Работы, цитирующие эту работу

Работ: 4

Работа: Quantum corrections in the simulation of decanano MOSFETs

1. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

   A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

   СтатьяSemiconductor materials and devicesTechnical Physics Letters2018Цитирований: 6

   ABIABI:AkademIndex/openalex/2026.other.397915

2. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

   M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2019Цитирований: 2

   ABIABI:AkademIndex/openalex/2019.article.000603

3. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

   A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

   СтатьяSemiconductor materials and devicesApplied Sciences2020Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.541488

4. The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

   A.E. Abdikarimov

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2020Цитирований: 1

   ABIABI:AkademIndex/openalex/2020.article.001438