Работы, цитирующие эту работу

Работ: 6

Работа: Laterally-Graded SiGe Crystals for High Resolution Synchrotron Optics

1. Preparation and Thermoelectric Properties of Polycrystalline Si0.4Ge0.6

   I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

   СтатьяSemiconductor materials and interfacesInorganic Materials2005Цитирований: 1

   ABIABI:AkademIndex/openalex/2005.article.000180

2. Growth and properties of single crystals of Si1 − x Ge x (0 < x < 0.35) solid solutions

   I. G. Atabaev, N. A. Matchanov, M. U. Khazhiev +1

   СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2010Цитирований: 1

   ABIABI:AkademIndex/openalex/2010.article.000289

3. Electrical properties of p-Si1 − x Ge x Au-Based p-i-n structures and Schottky barriers

   I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

   СтатьяSilicon Nanostructures and PhotoluminescenceInorganic Materials2008Цитирований: 0

   ABIABI:AkademIndex/openalex/2008.article.000319

4. Effect of the Ge content on the Schottky barrier height in structures based on Si1 − x Ge x solid solution

   N. A. Matchanov

   СтатьяSemiconductor materials and interfacesTechnical Physics2008Цитирований: 0

   ABIABI:AkademIndex/openalex/2008.article.000326

5. Homogeneity of high-resistivity p-Si1 − x Ge x 〈Au〉 crystals

   I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

   СтатьяSemiconductor materials and interfacesInorganic Materials2008Цитирований: 0

   ABIABI:AkademIndex/openalex/2008.article.000333

6. Influence of Ge content on formation of radiation defects in Si1−xGex solid solutions

   I. G. Atabaev, N. A. Matchanov, А. Yusupov +2

   СтатьяSilicon Effects in AgricultureComputational Materials Science2008Цитирований: 0

   ABIABI:AkademIndex/openalex/2008.article.000363