Работы, цитирующие эту работу

Работ: 4

Работа: Energy Levels in Silicon

1. Minority-Carrier Generation at the Interface between Silicon and Lead Borosilicate Glass

   П. Б. Парчинский, С. И. Власов

   СтатьяSemiconductor materials and interfacesRussian Microelectronics2001Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.623985

2. Study of photocapacitance in diodes fabricated from silicon doped with vanadium

   Kh. T. Igamberdiev, A. T. Mamadalimov, Р. А. Муминов +2

   СтатьяSemiconductor materials and interfacesSemiconductors2003Цитирований: 0

   ABIABI:AkademIndex/openalex/2003.article.000291

3. Effect of pressure on the properties of a silicon-glass interface

   С. И. Власов, M. A. Ergasheva, T. P. Adylov

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters2005Цитирований: 0

   ABIABI:AkademIndex/openalex/2005.article.000306

4. Study Of The Influence Of Radiation Gamma And Thermal Annealing On The Dlts Spectra Of Diodes From Si (Cr)

   Sultanov N.A., R. T., Zokirjon Mirzajonov +1

   СтатьяSemiconductor materials and interfacesThe American Journal of Applied Sciences2020Цитирований: 0

   ABIABI:AkademIndex/openalex/2020.article.003387