Работы, на которые ссылается эта работа

Работ: 35

Работа: Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

Physics of Semiconductor Devices
Simon M. Sze, Kwok K. Ng
Книга2006Цитирований: 33
ABI
Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors
Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge
Статья2011Цитирований: 11
ABI
Short-channel effects in SOI MOSFETs
S. Veeraraghavan, J.G. Fossum
Статья1989Цитирований: 7
ABI
Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries
A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2
ПрепринтAdvancements in Semiconductor Devices and Circuit Design2021Цитирований: 6
ABI
The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes
A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1
СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2021Цитирований: 5
ABI
Optimization of vertically stacked nanosheet FET immune to self-heating
M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1
СтатьяSemiconductor materials and devicesMicro and Nanostructures2023Цитирований: 5
ABI
Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes
A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4
СтатьяAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics2017Цитирований: 4
ABI
MOSFET scaling: Impact of two-dimensional channel materials
R. Granzner, Zhansong Geng, W. Kinberger +1
Статья2016Цитирований: 4
ABI
Interfacial heat transport across multilayer nanofilms in ballistic–diffusive regime
Hafedh Belmabrouk, Houssem Rezgui, Faouzi Nasri +2
Статья2020Цитирований: 3
ABI
Design optimization of nanoscale electrothermal transport in 10 nm SOI FinFET technology node
Houssem Rezgui, Faouzi Nasri, Giovanni Nastasi +5
Статья2020Цитирований: 3
ABI
Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
N. Loubet, Terence B. Hook, P. Montanini +61
Статья2017Цитирований: 3
ABI
Thermal conductivity of amorphous SiO2 thin film: A molecular dynamics study
Wenhui Zhu, Guangping Zheng, Sen Cao +1
Статья2018Цитирований: 3
ABI
Dimensioning for power and performance under 10nm: The limits of FinFETs scaling
M. Garcia Bardon, P. Schuddinck, Prasanth Raghavan +5
Статья2015Цитирований: 2
ABI
Exploring sub-20nm FinFET design with predictive technology models
Saurabh Sinha, Greg Yeric, Vikas Chandra +2
Статья2012Цитирований: 2
ABI
Extreme scaling enabled by 5 tracks cells: Holistic design-device co-optimization for FinFETs and lateral nanowires
M. Garcia Bardon, Yasser Sherazi, P. Schuddinck +14
Статья2016Цитирований: 2
ABI
Thermal conductivity and thermal boundary resistance of atomic layer deposited high-<i>k</i> dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon
Ethan A. Scott, John T. Gaskins, Sean W. King +1
Статья2018Цитирований: 2
ABI
The last silicon transistor: Nanosheet devices could be the final evolutionary step for Moore's Law
Peide D. Ye, T. Ernst, Mukesh Khare
Статья2019Цитирований: 2
ABI
Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET
Sunil Rathore, Rajeewa Kumar Jaisawal, P. N. Kondekar +1
Статья2022Цитирований: 2
ABI
Investigation of Analog/RF and linearity performance with self-heating effect in nanosheet FET
Sunil Rathore, Rajeewa Kumar Jaisawal, P. N. Kondekar +1
Статья2023Цитирований: 2
ABI
Systematic performance benchmarking of nanosheet and FinFET: An intrinsic self-heating perspective
Sunil Rathore, Rajeewa Kumar Jaisawal, Suneet Kumar Agnihotri +3
Статья2025Цитирований: 2
ABI
Nanoscale thermal transport
David G. Cahill, W. K. Ford, Kenneth E. Goodson +5
Статья2003Цитирований: 2
ABI
Quantum capacitance devices
Serge Luryi
Статья1988Цитирований: 2
ABI
Analysis of Novel Core-Shell Junctionless Nanosheet FET for CMOS Logic Applications
Vakkalakula Bharath Sreenivasulu, M. Prasad, Epuri Deepthi +2
Статья2024Цитирований: 2
ABI
Impact of the Self-Heating Effect on Nanosheet Field Effect Transistor Performance
Billel Smaani, Neha Paras, Shiromani Balmukund Rahi +3
Статья2023Цитирований: 2
ABI
A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor
A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3
СтатьяAdvancements in Semiconductor Devices and Circuit DesignSilicon2025Цитирований: 1
ABI