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Иш: Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

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  2. Current Injection in Solids

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  3. Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

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  6. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)<sub>1−<i>x</i></sub>(ZnSe)<sub><i>x</i></sub> with Nanocrystals

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  7. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

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  8. Dilute nonisovalent (II-VI)-(III-V) semiconductor alloys: Monodoping, codoping, and cluster doping in ZnSe-GaAs

    L. G. Wang, Alex Zunger

    Мақола20037 иқтибос
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  9. Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y (ZnSe) x (Ge2) y structures with quantum dots

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  10. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

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    МақолаSemiconductor Quantum Structures and DevicesSemiconductors20165 иқтибос
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  11. Properties of Semiconductor Alloys

    Sadao Adachi

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  12. Epitaxial growth of ZnSe on GaAs with the use of the ZnSe compound as the source

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  13. Effect of nonstoichiometry and doping on the photoconductivity spectra of GeSe layered crystals

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  14. The synthesis and photoelectric properties of Si-(Si2)1−x(ZnS)x epitaxial structures

    Б. Сапаев, А. С. Саидов

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  15. Cation variations at semiconductor interfaces: ZnSe(001)/GaAs(001) superlattices

    H. H. Farrell, Randall A. LaViolette

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  17. MOVPE growth and characterization of ZnSe-GaAs heterovalent heterostructures

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    Мақола19952 иқтибос
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  18. Chemical and structural aspects of annealed ZnSe/GaAs(001) heterostructures

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  20. The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x(ZnSe)x, Ge-(Ge2)1−x(ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x(ZnSe)x

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    МақолаPhase-change materials and chalcogenidesTechnical Physics Letters19982 иқтибос
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  21. Anion variations at semiconductor interfaces: ZnSe(100)/GaAs(100) superlattices

    H. H. Farrell, Randall A. LaViolette

    Мақола20052 иқтибос
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  22. Heat-voltaic effect of pSi-n(ZnSe)1 − x − y (Si2) x (GaP) y structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    МақолаSemiconductor materials and interfacesApplied Solar Energy20102 иқтибос
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  23. Effect of high intrinsic ion concentrations on electron energies in solid solutions of III–V and II–VI semiconductors

    Maurice Glicksman, W. D. Kraeft

    Мақола19852 иқтибос
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  24. Electric and luminescence properties of GaAs-AIIBIVCV2 single crystals

    I. K. Polushina, Yu. V. Rud, V. Yu. Rud’

    Мақола19992 иқтибос
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  25. Tailoring Heterovalent Interface Formation with Light

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