Ушбу иш иқтибос қилган ишлар

8 та иш

Иш: High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions

1. Electronic properties of two-dimensional systems

   Tsuneya Ando, A. B. Fowler, Frank Stern

   Мақола198225 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.192010

2. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

   А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

   МақолаSemiconductor materials and interfacesTechnical Physics201415 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.213638

3. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

   А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

   МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 иқтибос

   ABIABI:AkademIndex/openalex/2017.article.000091

4. Electron microscopy characterization of higher manganese silicide film structure on silicon

   Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

   МақолаSemiconductor materials and interfacesNanotechnologies in Russia20167 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.079735

5. Surface Science

   Kenjiro Oura, Michiko Katayama, А. В. Зотов +2

   Китоб20035 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.144464

6. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

   Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

   МақолаSemiconductor materials and interfacesSemiconductors20175 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.199258

7. Electron beam probe studies of semiconductor-insulator interfaces

   W. R. Bottoms, D.C. Guterman

   Мақола19742 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.630500

8. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.630501