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Works cited by this work

8 works

Work: High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions

  1. Electronic properties of two-dimensional systems

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    Article198225 citations
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  2. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    ArticleSemiconductor materials and interfacesTechnical Physics201415 citations
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  3. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

    А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 citations
    ABI

  4. Electron microscopy characterization of higher manganese silicide film structure on silicon

    Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

    ArticleSemiconductor materials and interfacesNanotechnologies in Russia20167 citations
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  5. Surface Science

    Kenjiro Oura, Michiko Katayama, А. В. Зотов +2

    Book20035 citations
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  6. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

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    ArticleSemiconductor materials and interfacesSemiconductors20175 citations
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  7. Electron beam probe studies of semiconductor-insulator interfaces

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  8. Untitled

    Other1 citations
    ABI