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Иш: Effect of temperature on the current transfer mechanism in the reverse I–V characteristics of the n-CdS/i-CdSxTe1−x/p-CdTe heterostructure

Injection photodiode based on an n-CdS/p-CdTe heterostructure
Ш. А. Мирсагатов, R. R. Kabulov, M. A. Makhmudov
МақолаChalcogenide Semiconductor Thin FilmsSemiconductors201319 иқтибос
ABI
Evidence for grain-boundary-assisted diffusion of sulfur in polycrystalline CdS/CdTe heterojunctions
M. K. Herndon, Anju Gupta, V. Kaydanov +1
Мақола199916 иқтибос
ABI
Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films
Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов
МақолаAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State201216 иқтибос
ABI
Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties
А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +4
МақолаChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20118 иқтибос
ABI
The study of factors that influence on the effectiveness of the photoconversion of n-CdS/p-CdTe heterostructures
R. R. Kabulov, M. A. Makhmudov, O. K. Ataboev +1
МақолаChalcogenide Semiconductor Thin FilmsApplied Solar Energy20167 иқтибос
ABI
Photosensitivity of n-CdS/p-CdTe heterojunctions obtained by chemical surface deposition of CdS
Г. А. Ильчук, V. V. Kus’nézh, V. Yu. Rud’ +3
Мақола20106 иқтибос
ABI
Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure
Ш. А. Мирсагатов, A. Yu. Leĭderman, O. K. Ataboev
МақолаChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20136 иқтибос
ABI
Recent progress on CdTe/CdS thin film solar cells
N. Romeo, A. Bosio, V. Canevari +1
Мақола20045 иқтибос
ABI
Influence of the back contact on the electrophysical and functional characteristics of thin-film CdTe Schottky barrier detector structures
Ш. А. Мирсагатов, А.С. Ачилов, B. N. Zaveryukhin +1
МақолаAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal20124 иқтибос
ABI
CdTe solar cells with open-circuit voltage breaking the 1 V barrier
James M. Burst, Joel N. Duenow, D. Albin +11
Мақола20163 иқтибос
ABI
Effect of irradiation with gamma-ray photons on the charge-transport mechanism in n-CdS/p-CdTe heterostructures
S. A. Muzafarova, Ш. А. Мирсагатов, F. N. Dzhamalov
МақолаAdvanced Semiconductor Detectors and MaterialsSemiconductors20093 иқтибос
ABI
Study of the intermediate layer at the n +-CdS/p-CdTe interface
S. A. Muzafarova, B. U. Aĭtbaev, Ш. А. Мирсагатов +2
МақолаChalcogenide Semiconductor Thin FilmsSemiconductors20083 иқтибос
ABI
A new method for CdSexTe1-x band grading for high efficiency thin-absorber CdTe solar cells
Elisa Artegiani, A. Gasparotto, Prabeesh Punathil +6
Мақола20212 иқтибос
ABI
A review on the improvement in performance of CdTe/CdS thin-film solar cells through optimization of structural parameters
Tarkeshwar Sinha, Devjyoti Lilhare, Ayush Khare
Шарҳ мақола20192 иқтибос
ABI
The electrical properties of n-CdS/p-CdTe and n-ZnS/p-CdTe heterojunctions fabricated by a combination of SILAR and vacuum deposition techniques
V.K. Ashith, K. Priya, Gowrish K. Rao
Мақола20212 иқтибос
ABI
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