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18 та иш

Иш: Capacitive Spectroscopy of Deep Levels in Silicon with Samarium Impurity

  1. Effect of the Diffusion of Copper Atoms in Polycrystalline CdTe Films Doped with Pb Atoms

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, S. A. Muzafarova +1

    МақолаAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics202312 иқтибос
    ABI

  2. Defect-formation processes in silicon doped with manganese and germanium

    K. P. Abdurakhmanov, Sharifa B. Utamuradova, Kh.S. Daliev +2

    Мақола199810 иқтибос
    ABI

  3. Features of the behavior of lanthanum and hafnium atoms in silicon

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20069 иқтибос
    ABI

  4. Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

    D. V. Lang

    Мақола19749 иқтибос
    ABI

  5. Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Elmira M. Naurzalieva +1

    МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20238 иқтибос
    ABI

  6. Characteristics of X-ray and gamma radiation detectors based on polycrystalline CdTe and CdZnTe films

    Sharifa B. Utamuradova, S. A. Muzafarova, A. M. Abdugafurov +3

    МақолаAdvanced Semiconductor Detectors and MaterialsApplied Physics20218 иқтибос
    ABI

  7. Thermally Induced Deep Centers in Silicon Doped with Europium or Lanthanum

    Kh.S. Daliev, Sharifa B. Utamuradova, I. Kh. Khamidzhonov +3

    МақолаSilicon Nanostructures and PhotoluminescenceInorganic Materials20018 иқтибос
    ABI

  8. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

    N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

    МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20238 иқтибос
    ABI

  9. Calculation of the Total Current Generated in a Tunnel Diode Under the Action of Microwave and Magnetic Fields

    G. Gulyamov, Sharifa B. Utamuradova, Mukhamadjon G. Dadamirzaev +5

    МақолаSemiconductor Quantum Structures and DevicesEast European Journal of Physics20235 иқтибос
    ABI

  10. Silicon clusters doped with an yttrium metal atom impurity

    Chuanyun Xiao, Jessica Blundell, Frank Hagelberg +1

    Мақола20034 иқтибос
    ABI

  11. The Influence of the Impurities with Deep Levels on the Iron Behavior in Silicon

    С. З. Зайнабидинов, Kh.S. Daliev, K. P. Abdurakhmanov +3

    МақолаSilicon and Solar Cell TechnologiesModern Physics Letters B19974 иқтибос
    ABI

  12. Comparison of Infrared and Activation Analysis Results in Determining the Oxygen and Carbon Content in Silicon

    C. Gross, Gianni Gaetano, T. N. Tucker +1

    Мақола19722 иқтибос
    ABI

  13. Electrical properties of silicon layers implanted with erbium and oxygen ions in a wide dose range and thermally treated in different temperature conditions

    О. В. Александров, A. O. Zakhar’in, Н. А. Соболев +1

    Мақола20022 иқтибос
    ABI

  14. Thermophysical spectroscopy of the defective states in silicon

    Kh. T. Igamberdyev, A. T. Mamadalimov, P. K. Khabibullaev

    МақолаSilicon and Solar Cell TechnologiesJournal of Engineering Physics and Thermophysics19891 иқтибос
    ABI

  15. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  16. Effect of heat treatment on the properties of erbium-doped silicon

    С. И. Власов, D. É. Nazyrov, A. A. Iminov +1

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20001 иқтибос
    ABI

  17. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  18. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI