Ушбу иш иқтибос қилган ишлар

8 та иш

Иш: Obtaining new types of compounds between silicon and cadmium sulfide

1. Injection photodiode based on an n-CdS/p-CdTe heterostructure

   Ш. А. Мирсагатов, R. R. Kabulov, M. A. Makhmudov

   МақолаChalcogenide Semiconductor Thin FilmsSemiconductors201319 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.109943

2. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

   Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

   МақолаAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State201216 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.200872

3. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

   А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

   МақолаMaterial Science and ThermodynamicsSemiconductors200913 иқтибос

   ABIABI:AkademIndex/openalex/2009.article.000084

4. On the theory of sublinear current-voltage characteristics of semiconductor structures

   A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

   Мақола197812 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.369424

5. Injection-based photodetectors

   І. М. Викулин, Ш. Д. Курмашев, V. I. Stafeev

   Мақола200811 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.200871

6. Injection photodiode based on p-CdTe film

   Ш. А. Мирсагатов, A.K. Uteniyazov

   МақолаAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters201211 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.215221

7. Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure

   А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

   МақолаPhase-change materials and chalcogenidesApplied Solar Energy20198 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.278129

8. Improvement of life time of minority carriers in GaAs epi-layer grown on Ge substrate

   Ken Takahashi, Shigeki Yamada, Ryuichi Nakazono +4

   Мақола19982 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.498636