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Ушбу иш иқтибос қилган ишлар

23 та иш

Иш: Raman Spectoroscopy of Silicon Single Crystals, Doped with Palladium and Irradiated by GammaRays

  1. Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles

    В. А. Козлов, Vitalii V. Kozlovski

    Мақола20016 иқтибос
    ABI

  2. Iron contamination in silicon technology

    A. A. Istratov, H. Hieslmair, E. R. Weber

    Мақола20005 иқтибос
    ABI

  3. PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

    Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4

    МақолаSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal20234 иқтибос
    ABI

  4. Picosecond-pulsed laser ablation of aluminum foils: crater morphology and plasma parameters

    Munisbek Akhmedov, Jurabek Sadullayev, Murodbek Vapayev +3

    МақолаLaser-induced spectroscopy and plasmaEngineering Research Express20254 иқтибос
    ABI

  5. Determining the material structure of microcrystalline silicon from Raman spectra

    C. Smit, R.A.C.M.M. van Swaaij, H. Donker +3

    Мақола20034 иқтибос
    ABI

  6. Raman spectroscopy of PtSi formation at the Pt/Si(100) interface

    J. C. Tsang, Y. Yokota, R. Matz +1

    Мақола19844 иқтибос
    ABI

  7. One and two-phonon Raman scattering from nanostructured silicon

    Igor Iatsunskyi, Grzegorz Nowaczyk, Stefan Jurga +3

    Мақола20153 иқтибос
    ABI

  8. Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate

    A. Wellner, Vincent Paillard, H. Coffin +2

    Мақола20043 иқтибос
    ABI

  9. Critical-point analysis of the two-phonon Raman spectrum of silicon

    K. Uchinokura, Tomoyuki Sekine, E. Matsuura

    Мақола19743 иқтибос
    ABI

  10. The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

    Marat S. Yunusov, M. Kаrimov, M. N. Alkulov +1

    МақолаSilicon and Solar Cell TechnologiesRadiation effects and defects in solids20003 иқтибос
    ABI

  11. Influence of Different Types of Radiation on the Crystal Structure of Silicon Monocrystals n-Si

    Sharifa B. Utamuradova, Dilmurod A. Rakhmanov, A.S. Abiyev

    Мақола20243 иқтибос
    ABI

  12. The optical properties of luminescence centres in silicon

    Gordon Davies

    Мақола19893 иқтибос
    ABI

  13. Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

    Ioana Pintilie, G. Lindstroem, Alexandra Junkes +1

    Мақола20093 иқтибос
    ABI

  14. Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors

    C. Altana, L. Calcagno, C. Ciampi +8

    Мақола20232 иқтибос
    ABI

  15. INFLUENCE OF ALPHA PARTICLES ON TECHNOLOGICAL IMPURITIES IN SILICON DOPED WITH PLATINUM

    Sharifa B. Utamuradova

    Мақола20252 иқтибос
    ABI

  16. Investigation of Sensitive Thermal Sensors Based on Si<Pt> and Si<Pd>

    Sharifa B. Utamuradova, Dilmurod A. Rakhmanov, A.S. Abiyev

    МақолаGas Sensing Nanomaterials and SensorsEast European Journal of Physics20241 иқтибос
    ABI

  17. Morphological Studies of (Ge2)1-X(ZnSe)X Solid Solutions

    A.Sh. Razzokov, А. С. Саидов, M.A. Shonazarova +2

    МақолаPhase-change materials and chalcogenidesEast European Journal of Physics20251 иқтибос
    ABI

  18. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  19. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  20. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  21. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  22. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  23. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI