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Иш: Defect Formation and Displacement of Atoms on the Surface of a LiF Crystal under Bombardment with Low-Energy Cesium Ions

  1. Сарлавҳасиз

    Бошқа19 иқтибос
    ABI

  2. Procedure for determining defects in sputtered clusters of ionic crystals

    Utkirjon Sharopov, Б.Г. Атабаев, R. Djabbarganov +2

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201614 иқтибос
    ABI

  3. Comparison of electron irradiation on the formation of surface defects in situ and post thin-film LiF/Si(111) deposition

    U. B. Sharopov, Kulwinder Kaur, М. К. Курбанов +4

    МақолаSemiconductor materials and devicesThin Solid Films202113 иқтибос
    ABI

  4. Kinetics of aggregations of F 2, F 3, X, and colloid centers in LiF/Si(111) films upon low-temperature annealing

    Utkirjon Sharopov, Б.Г. Атабаев, R. Djabberganov +1

    МақолаElectron and X-Ray Spectroscopy TechniquesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201311 иқтибос
    ABI

  5. Controlling the Low-temperature Ionic Purification of a Silicon Surface by Electron Spectroscopy

    U. B. Sharopov, Kulwinder Kaur, М. К. Курбанов +3

    МақолаIon-surface interactions and analysisSilicon202111 иқтибос
    ABI

  6. Comparative research fluorine and colloidal aggregate formation on the surface lithium fluoride thin films during electronic, ionic and thermal treatments

    Utkirjon Sharopov, Abduzokhidkhuja Abdusalomov, Alisher Kakhramonov +10

    МақолаGa2O3 and related materialsVacuum202310 иқтибос
    ABI

  7. Investigation of Angular Spectrum of Scattered Inert Gas Ions from the InGaP (001) Surface

    М. K. Kаrimov, Uchkun Kutliev, S.B. Bobojonova +1

    МақолаIon-surface interactions and analysisPhysics and Chemistry of Solid State202110 иқтибос
    ABI

  8. Formation of defects on the surface of LiF crystals under irradiation with different ions mass

    Utkirjon Sharopov, Umid Gopparov, K. Yu. Rashidov +8

    МақолаIon-surface interactions and analysisRadiation effects and defects in solids20229 иқтибос
    ABI

  9. Investigation of Defect InP(001) Surface by Low Energy Ion Scаttering Spectroscopy

    М. K. Kаrimov, F.O. Kuryozov, Sh.R. Sadullaev +2

    МақолаIntegrated Circuits and Semiconductor Failure AnalysisMaterials science forum20228 иқтибос
    ABI

  10. The effect of silicon-germanium microheterojunctions on the parameters of silicon solar cells

    Б. А. Абдурахманов, Х. М. Илиев, С. А. Тачилин +2

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20107 иқтибос
    ABI

  11. Effect of annealing on the crystal structure of the surface of silicon doped with Ni, Fe, and Co ions

    Б. Э. Эгамбердиев, N. T. Rustamov, A. S. Mallaev +1

    МақолаSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20156 иқтибос
    ABI

  12. Influence of Doping with Rare Earth Elements on the Parameters of Silicon Photocells

    Б. Э. Эгамбердиев, Sh. B. Utamurodova, С. А. Тачилин +6

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20226 иқтибос
    ABI

  13. SRIM-2003

    James F. Ziegler

    Мақола20045 иқтибос
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  14. Effect of ion-induced secondary radiations on the formation of extended defects and radiolysis beyond the range of swift 12C, 50Ti, and 52Cr ions in LiF

    T. Krasta, I. Manika, Alexei Kuzmin +3

    Мақола20234 иқтибос
    ABI

  15. Dependence of the accuracy of the silicon diode temperature sensors for cryogenic thermometry on the spread of their parameters

    R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5

    МақолаCalibration and Measurement TechniquesLow Temperature Physics20234 иқтибос
    ABI

  16. Advanced spectroscopic investigation of colour centres in LiF crystals irradiated with monochromatic hard x-rays

    Maria Aurora Vincenti, Rosa Maria Montereali, F. Bonfigli +15

    Мақола20243 иқтибос
    ABI

  17. The Displacement of Atoms in Solids by Radiation

    G.H. Kinchin, R. S. Pease

    Мақола19553 иқтибос
    ABI

  18. Manganese depth-concentration profiles in ion-implanted silicon studied by Rutherford backscattering

    Б. Э. Эгамбердиев, M. Yu. Adylov

    МақолаIon-surface interactions and analysisTechnical Physics Letters20012 иқтибос
    ABI

  19. Surface modification of collagen using low-energy noble gas ion implantation

    Jérôme Leveneur, Yi Zhang, Holger Fiedler +3

    Мақола20232 иқтибос
    ABI

  20. Study of the Distribution Profile for Nickel Implanted in Silicon and the Effect of Annealing on the Structure

    Б. Э. Эгамбердиев, A. A. Akbarov

    МақолаSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20212 иқтибос
    ABI

  21. 120 MeV Ni10+ swift heavy ions irradiation on CdSe nanocrystals induces cubic to hexagonal phase transformation - A study of microstructural modification

    Debojyoti Nath, Fouran Singh, Ratan Das

    Мақола20202 иқтибос
    ABI

  22. Surface and displacement damage engineering on CdSe nanocrystalline thin film by swift heavy Ag ions: A theoretical investigation by SRIM/TRIM package

    Debojyoti Nath, Ratan Das

    Мақола20212 иқтибос
    ABI

  23. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  24. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  25. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI