Ушбу иш иқтибос қилган ишлар

7 та иш

Иш: High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

1. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

   Chih‐Tang Sah, Robert N. Noyce, W. Shockley

   Мақола195714 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.382034

2. Characterization of p–n structures grown by sublimation heteroepitaxy of 3C-SiC on 6H-SiC

   Anatoly M. Strel’chuk, N.S. Savkina, Alexey N. Kuznetsov +2

   Мақола20023 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.413671

3. Electrical characteristics of p-3C–SiC/n-6H–SiC heterojunctions grown by sublimation epitaxy on 6H–SiC substrates

   A. А. Lebedev, Anatoly M. Strel’chuk, Denis Davydov +5

   Мақола20013 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.413673

4. Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation

   N.S. Savkina, A. S. Tregubova, M. P. Scheglov +3

   Мақола20022 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.413670

5. Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

   Anatoly M. Strel’chuk, A. А. Lebedev, D. V. Davydov +8

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20041 иқтибос

   ABIABI:AkademIndex/openalex/2004.article.000056

6. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.413672

7. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.413674