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Иш: Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al
A new approach in impurity doping of 4H-SiC using silicidation
Chin‐Che Tin, Suwan Mendis, Michelle T. Tin +2
Мақола20134 иқтибосABIThe Method of Solid State Impurity Diffusion and Doping In 4H-SiC
Suwan Mendis, Chin-che Tin, Ilkham G. Atabaev +1
Мақола20133 иқтибосABIComponent Technologies for Ultra-High-Voltage 4H-SiC pin Diode
Koji Nakayama, Ryosuke Ishii, Katsunori Asano +3
Мақола20112 иқтибосABISelective doping of 4H–SiC by codiffusion of aluminum and boron
Yu Gao, Stanislav I. Soloviev, T. S. Sudarshan +1
Мақола20012 иқтибосABIBoron and aluminum diffusion into 4H–SiC substrates
Andrzej Kubiak, Jacek Rogowski
Мақола20102 иқтибосABIPower bipolar devices based on silicon carbide
P. A. Ivanov, M. E. Levinshteĭn, T. T. Mnatsakanov +2
Мақола20052 иқтибосABIHigh-temperature diffusion doping of porous silicon carbide
M. G. Mynbaeva, E. N. Mokhov, A. A. Lavrent’ev +1
Мақола20082 иқтибосABIBoron diffusion into 6H-SiC through graphite mask
Stanislav I. Soloviev, Ying Gao, X. Wang +1
Мақола20012 иқтибосABI