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Ушбу ишга иқтибос қилган ишлар

8 та иш

Иш: Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

  1. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leĭderman

    МақолаNear-Field Optical MicroscopyPhysics of the Solid State20147 иқтибос
    ABI

  2. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

    Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

    МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 иқтибос
    ABI

  3. Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

    А. С. Саидов, Sh. N. Usmonov, М. С. Саидов

    МақолаSilicon Nanostructures and PhotoluminescenceSemiconductors20153 иқтибос
    ABI

  4. Influence of GaAs molecules on the photosensitivity of pSi–n(GaSb)1–x (Si2) x and nGaAs–p(InSb)1–x (Sn2) x heterostructures

    Sh. N. Usmonov

    МақолаSemiconductor materials and interfacesApplied Solar Energy20162 иқтибос
    ABI

  5. Morphology and Current Transport in a Thin-Film Polycrystalline Au–ZnxCd1–xS–Mo Structure with Wide Photosensitivity Range in the Ultraviolet and Visible Radiation Spectral Region

    R. R. Kobulov, M. A. Makhmudov, S. Yu. Gerasimenko +1

    МақолаChalcogenide Semiconductor Thin FilmsApplied Solar Energy20182 иқтибос
    ABI

  6. Determining certain physical settings of photocells

    A. Yu. Leyderman

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20110 иқтибос
    ABI

  7. Structural Features of the Epitaxial Layer of the (GaAs)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(Ge<sub>2</sub>)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Solid Solution Grown from a Bismuth Solution Melt

    А. С. Саидов, M. U. Kalanov, D. V. Saparov +4

    МақолаSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20240 иқтибос
    ABI

  8. Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase

    А. С. Саидов, Shukrullo Usmonov, D. V. Saparov +4

    МақолаGaN-based semiconductor devices and materialsAIP conference proceedings20240 иқтибос
    ABI