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Phase-change materials and chalcogenides

129 ta ish

  1. Origin of the electrical activity of iron atoms in vitreous arsenic selenide

    А. В. Марченко, T. Yu. Rabchanova, П. П. Серегин +2

    MaqolaPhase-change materials and chalcogenidesGlass Physics and Chemistry20161 iqtibos
    ABI

  2. The effect of cycle deformation on the AC conductivity of (Bi0.3Sb0.7)2Te3 films

    Kh. M. Sulaimonov

    MaqolaPhase-change materials and chalcogenidesTechnical Physics20171 iqtibos
    ABI

  3. Effect of the Sb/Se Ratio on the Structural and Electrical Properties of SbxSey Films

    М. С. Тиванов, T. M. Razykov, К. M. Kuchkarov +4

    MaqolaChalcogenide Semiconductor Thin FilmsApplied Solar Energy20231 iqtibos
    ABI

  4. Effect of substrate temperature on the microstructural and optical properties of chemical molecular beam deposited sb2s3 films

    T. M. Razykov, К. M. Kuchkarov, М. С. Тиванов +12

    MaqolaChalcogenide Semiconductor Thin FilmsJournal of Materials Science Materials in Electronics20241 iqtibos
    ABI

  5. Mathematical Model for Thermo-Electrical Instabilities in Semiconductors

    Mukaddas Arzikulova

    MaqolaThermal properties of materialsMathematical Modelling and Applications20241 iqtibos
    ABI

  6. Morphological Studies of (Ge2)1-X(ZnSe)X Solid Solutions

    A.Sh. Razzokov, A.S. Saidov, M.A. Shonazarova +2

    MaqolaPhase-change materials and chalcogenidesEast European Journal of Physics20251 iqtibos
    ABI

  7. Study of the Influence of Temperature on the Transitions of the CdS/Si/CdTe Heterosystem

    F. A. Giyasova, Khayot Bakhronov, Murodjon A. Yuldoshev +6

    MaqolaSemiconductor materials and interfacesEast European Journal of Physics20251 iqtibos
    ABI

  8. Influence of the Temperature and Cyclic Deformations of (BixSb1–x)2Te3 Films on Their Resistance

    Kh.S. Daliev, M. M. Ahmedov, M. K. Onarkulov

    MaqolaAdvanced Thermoelectric Materials and DevicesJournal of Engineering Physics and Thermophysics20211 iqtibos
    ABI

  9. Impurity tin atoms in glassy As x S1 − x and As x Se1 − x

    G. A. Bordovsky, А. В. Марченко, П. П. Серегин +1

    MaqolaPhase-change materials and chalcogenidesInorganic Materials20141 iqtibos
    ABI

  10. Theoretical analysis of the off-axis Z-scan method for measuring nonlinear refractive indices

    A. I. Ryasnyanskiı̆

    MaqolaNonlinear Optical Materials StudiesOptics and Spectroscopy20061 iqtibos
    ABI

  11. Solidification of Anisotropic Semiconducting Material - Tellurium under Microgravity Conditions

    R. V. Parfeniev, I. I. Farbshteǐn, I. L. Shul’pina +5

    MaqolaPhase-change materials and chalcogenidesMaterials science forum20001 iqtibos
    ABI

  12. Basic Electronics of the Switching Processes in Semiconductor p-n Junctions

    Yurii R. Nosov

    BobSemiconductor Quantum Structures and Devices19690 iqtibos
    ABI

  13. Study on radiative defects ind by reactor irradiation in Te semiconductor compounds

    Yunusov, П. П. Серегин, A. Kamolov

    MaqolaAdvanced Semiconductor Detectors and Materials19760 iqtibos
    ABI

  14. Inelastic relaxation in Pb1−<i>x</i>Sn<i>x</i>Te solid solutions

    Yu. A. Bratashevskii, V. D. Prozorovskiı̆, Yu. S. Kharionovskii

    MaqolaOptical and Acousto-Optic TechnologiesSoviet Journal of Low Temperature Physics19770 iqtibos
    ABI

  15. Diamagnetic resonance in Pb1–<i>x</i>Sn<i>x</i>Te

    Yu. A. Bratashevskii, V. D. Prozorovskiı̆, Yu. S. Khaionovskii

    MaqolaSolid-state spectroscopy and crystallographySoviet Journal of Low Temperature Physics19770 iqtibos
    ABI

  16. Investigation of peculiarities in the temperature dependence of the thermal conductivity of Pbl2 and ln4Se3 layer crystals at low temperatures

    E. Anders, I. V. Volchok, B. Ya. Sukharevskiǐ

    MaqolaThermography and Photoacoustic TechniquesSoviet Journal of Low Temperature Physics19780 iqtibos
    ABI

  17. Temperature dependence of the electrical resistance of amorphous bismuth films

    Yu. F. Komnik, Б. И. Белевцев

    MaqolaThermodynamic and Structural Properties of Metals and AlloysSoviet Journal of Low Temperature Physics19800 iqtibos
    ABI

  18. Dielectric properties of thin films of chalcogenide glasses

    V. M. Kalygina, V. I. Gaman, A. I. Badluev

    MaqolaPhase-change materials and chalcogenidesRussian Physics Journal19800 iqtibos
    ABI

  19. Ion doping of gallium arsenide

    П. В. Павлов, E. I. Zorin, D. I. Tetelbaum

    MaqolaPhase-change materials and chalcogenidesRussian Physics Journal19800 iqtibos
    ABI

  20. Temperature dependence of spin–lattice relaxation probabilities in the excited triplet state of crystalline benzil

    A. A. Avdeenko, V. А. Karachevtsev, Yu. V. Naboĭkin +1

    MaqolaPhotochemistry and Electron Transfer StudiesSoviet Journal of Low Temperature Physics19800 iqtibos
    ABI

  21. Electrical properties (dc and ac) of vanadium-borate glass

    V. M. Kalygina, В. И. Косинцев, V. I. Gaman +3

    MaqolaGlass properties and applicationsRussian Physics Journal19810 iqtibos
    ABI

  22. Low-temperature thermal conductivity of uniaxially compressed ln4Se3 layered crystals

    E. Anders, I. V. Volchok

    MaqolaChalcogenide Semiconductor Thin FilmsSoviet Journal of Low Temperature Physics19810 iqtibos
    ABI

  23. Two‐Photon Interband Absorption in Qunntized Semiconductor Films with Participation of Deep Impurity Centers

    В. Д. Кревчик, A.Ya. Yafasov

    MaqolaNonlinear Optical Materials Studiesphysica status solidi (b)19820 iqtibos
    ABI

  24. Range and spatial distribution of ion-implanted impurities in glasses

    A.A. Deshkovskaya, A. F. Burenkov, Ф. Ф. Комаров

    MaqolaGlass properties and applicationsRadiation Effects19830 iqtibos
    ABI

  25. The Localization Energy of Wannier‐Mott Excitons at the Interface

    I. M. Nepomnyashi, V. N. Nishanov

    MaqolaNonlinear Dynamics and Pattern Formationphysica status solidi (b)19840 iqtibos
    ABI