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Ish: The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

  1. Physics of Semiconductor Devices

    J.-P. Colinge, Cindy Colinge

    Kitob200258 iqtibos
    ABI

  2. The physics of semiconductor devices

    H. L. Grubin

    Maqola197918 iqtibos
    ABI

  3. Photoelectric properties of higher manganese silicide (HMS)-SilangleMnrangle-M structures

    T. S. Kamilov, V. P. Chirva, D.K. Kabilov

    MaqolaOchiq kirishSemiconductor materials and interfacesSemiconductor Science and Technology199911 iqtibos
    ABI

  4. On the mechanism of appearance of space-charge-limited current in higher manganese silicide (HMS)--HMS and HMS--M structures

    T. S. Kamilov, B L Sadullaev, U Sh Ganiev +1

    MaqolaOchiq kirish19988 iqtibos
    ABI

  5. Electron microscopy characterization of higher manganese silicide film structure on silicon

    Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

    MaqolaSemiconductor materials and interfacesNanotechnologies in Russia20167 iqtibos
    ABI

  6. Electronic properties of semiconducting silicides: fundamentals and recent predictions

    L. Ivanenko, В. Л. Шапошников, А. Б. Филонов +6

    Maqola20046 iqtibos
    ABI

  7. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

    Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

    MaqolaSemiconductor materials and interfacesSemiconductors20175 iqtibos
    ABI

  8. On the possibility of developing thermoelectric sensors based on multielement higher manganese silicide film structures

    T. S. Kamilov, D. K. Kabilov, I. S. Samiev +1

    Maqola20053 iqtibos
    ABI

  9. Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    MaqolaOchiq kirishSemiconductor materials and interfacesEurasian journal of physics and functional materials20183 iqtibos
    ABI

  10. Transport Properties

    L. Ivanenko, H. Lange, A. Heinrich

    Bob20003 iqtibos
    ABI

  11. Photoconduction amplification and quenching in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterostructures

    T. S. Kamilov, I. V. Ernst, A. Yu. Samunin

    MaqolaSemiconductor materials and interfacesTechnical Physics20142 iqtibos
    ABI

  12. Formation of higher manganese silicide films on silicon

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

    MaqolaSemiconductor materials and interfacesTechnical Physics20052 iqtibos
    ABI

  13. Defect engineering in implantation technology of silicon light-emitting structures with dislocation-related luminescence

    Н. А. Соболев

    Maqola20102 iqtibos
    ABI

  14. On the growth of higher manganese silicide films on silicon

    Andrey Orekhov, T. S. Kamilov, Abdumalik Gaibov +2

    MaqolaSemiconductor materials and interfacesTechnical Physics20102 iqtibos
    ABI

  15. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  16. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  17. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  18. Sarlavhasiz

    BoshqaOchiq kirish1 iqtibos
    ABI

  19. Sarlavhasiz

    BoshqaOchiq kirish1 iqtibos
    ABI