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Ish: Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs
Single-layer MoS2 transistors
Branimir Radisavljevic, Aleksandra Rađenović, Jacopo Brivio +2
Maqola20118 iqtibosABIPhysical origin of negative differential resistance in SOI transistors
Liam McDaid, Steven Hall, Phil Mellor +2
Maqola19895 iqtibosABIThermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films
Matthew A. Panzer, Michael Shandalov, Jeremy Rowlette +4
Maqola20094 iqtibosABIMOSFET scaling: Impact of two-dimensional channel materials
R. Granzner, Zhansong Geng, W. Kinberger +1
Maqola20164 iqtibosABIChannel Length Scaling of MoS<sub>2</sub> MOSFETs
Han Liu, Adam T. Neal, Peide D. Ye
Maqola20123 iqtibosABISimulation of 50-nm Gate Graphene Nanoribbon Transistors
Cedric Nanmeni Bondja, Zhansong Geng, R. Granzner +2
Maqola20162 iqtibosABIAdvances in MoS2-Based Field Effect Transistors (FETs)
Xin Tong, Eric Ashalley, Feng Lin +2
Sharh maqola20152 iqtibosABIThe contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS<sub>2</sub> based MOSFET
A. É. Atamuratov, X. Sh. Saparov, T.A. Atamuratov +2
MaqolaGraphene research and applications2021 International Conference on Information Science and Communications Technologies (ICISCT)20212 iqtibosABI