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Semiconductor materials and devices

277 works

  1. Investigation of the transparent dielectric defect structure using the emission of multiply charged ions

    R. Abdupataev, M.R. Bendilov, Kh.B. Bejsembaeva +1

    ArticleIntegrated Circuits and Semiconductor Failure Analysis19861 citations
    ABI

  2. Energy Levels of Nanodots Inside Semiconductor Nanowires

    A. B. Davlatov, G. Gulyamov, Doston Urinboev

    ArticleAdvancements in Semiconductor Devices and Circuit DesignBrazilian Journal of Physics20241 citations
    ABI

  3. Ca-assisted nitrogen-rich molecular approach for the synthesis of monodisperse tantalum oxide and (oxy)nitride nanocrystals for visible light–induced water oxidation

    Mirabbos Hojamberdiev, Isabel Gonzalo‐Juan

    ArticleAdvanced Photocatalysis TechniquesJournal of the Ceramic Society of Japan20161 citations
    ABI

  4. Controlling the Low-Temperature Ionic Purification of a Silicon Surface by Electron Spectroscopy

    U. B. Sharopov, Kulwinder Kaur, М. К. Курбанов +3

    PreprintSemiconductor materials and devicesResearch Square20211 citations
    ABI

  5. Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

    Anatoly M. Strel’chuk, A. А. Lebedev, N.S. Savkina +1

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20071 citations
    ABI

  6. Surface state density at the semiconductor-glass interface

    Aslan Nasirov

    ArticleSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20081 citations
    ABI

  7. Analysis of Porous Nanosilicon by Raman Spectroscopy

    V. M. Rotshteyn, T. K. Turdaliev, Х. Б. Ашуров

    ArticleSilicon Nanostructures and PhotoluminescenceJournal of Applied Spectroscopy20221 citations
    ABI

  8. Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion

    Kh. N. Zhuraev, А. Yusupov, A. G. Gulyamov +3

    ArticleSilicon Carbide Semiconductor TechnologiesJournal of Engineering Physics and Thermophysics20201 citations
    ABI

  9. Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures

    A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev

    ChapterSemiconductor materials and interfacesInTech eBooks20111 citations
    ABI

  10. Nonmonotonous capacitance-voltage characteristics in metal-glass-semiconductor structures

    С. И. Власов, Aslan Nasirov, О. О. Маматкаримов +1

    ArticleSemiconductor materials and devicesSurface Engineering and Applied Electrochemistry20081 citations
    ABI

  11. Drift mobility of carriers in porous silicon

    N. S. Averkiev, L. P. Kazakova, É. A. Lebedev +1

    ArticleSilicon Nanostructures and PhotoluminescenceSemiconductors20011 citations
    ABI

  12. Positron annihilation lifetime in float‐zone n‐type silicon irradiated by fast electrons: a thermally stable vacancy defect

    N.Yu. Arutyunov, V. V. Emtsev, R. Krause‐Rehberg +3

    ArticleMuon and positron interactions and applicationsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics20161 citations
    ABI

  13. Study of the formation and unimolecular fragmentation of Si n O+ m clusters under ion bombardment

    Н. Х. Джемилев, С. Ф. Коваленко, С. Е. Максимов +2

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20171 citations
    ABI

  14. Relationship of electrical resistance of polycrystalline tin films to structural characteristics

    Б. И. Белевцев, Yu. F. Komnik, V. E. Kopina +1

    ArticleCopper Interconnects and ReliabilitySoviet Journal of Low Temperature Physics19801 citations
    ABI

  15. Kinetic properties of bismuth thin films

    Yu. F. Komnik, В. В. Андриевскии

    ArticleCopper Interconnects and ReliabilitySoviet Journal of Low Temperature Physics19750 citations
    ABI

  16. Inelastic tunnel effect in thin films of condensed gases

    O. I. Shklyarevskiǐ, I. K. Yanson, A. A. Lysykh

    ArticleQuantum and electron transport phenomenaSoviet Journal of Low Temperature Physics19750 citations
    ABI

  17. Effects of impurities on the residual electrical resistivity of indium and gallium

    Β. N. Aleksandrov, V. V. Dukin

    ArticleSurface and Thin Film PhenomenaSoviet Journal of Low Temperature Physics19760 citations
    ABI

  18. Energy band splitting phenomenon in intercalated dielectrics

    K. A. Katrunov, V. M. Koshkin, A. P. Mil’ner +1

    ArticleSemiconductor materials and devicesSoviet Journal of Low Temperature Physics19780 citations
    ABI

  19. Tunneling injection of electrons into thin normal-metal films

    V. P. Seminozhenko, A. A. Yatsenko

    ArticleSurface and Thin Film PhenomenaSoviet Journal of Low Temperature Physics19780 citations
    ABI

  20. Effect of impurities on the residual resistance of niobium

    Β. N. Aleksandrov, G. P. Kovtun, V. A. Elenskiǐ

    ArticleMetal and Thin Film MechanicsSoviet Journal of Low Temperature Physics19790 citations
    ABI

  21. Electron localization as a possible explanation of the low-temperature increase in the resistance of thin bismuth films

    Yu. F. Komnik, E. I. Bukhshtab, Yu. V. Nikitin

    ArticleQuantum and electron transport phenomenaSoviet Journal of Low Temperature Physics19810 citations
    ABI

  22. Longitudinal galvanomagnetic effect in thin bismuth films

    В. В. Андриевскии, А. В. Бутенко, Yu. F. Komnik

    ArticleCopper Interconnects and ReliabilitySoviet Journal of Low Temperature Physics19810 citations
    ABI

  23. Investigation of the band spectrum of semiconductors by means of a tunnel diode under pressure

    Z. M. Alekseeva, A. P. Vyatkin, А. П. Дмитриев

    ArticleAdvancements in Semiconductor Devices and Circuit DesignRussian Physics Journal19810 citations
    ABI

  24. Influence of the type of impurity on the scattering of conduction electrons in niobium and vanadium at 20.4 °K

    Β. N. Aleksandrov, Н. В. Далакова, М. И. Слободской +1

    ArticleAdvanced Chemical Physics StudiesSoviet Journal of Low Temperature Physics19810 citations
    ABI

  25. Point contact spectroscopic study of the electron–phonon interaction in lead

    A. V. Khotkevich, I. K. Yanson

    ArticleQuantum and electron transport phenomenaSoviet Journal of Low Temperature Physics19810 citations
    ABI