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Works cited by this work

20 works

Work: Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

  1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201523 citations
    ABI

  2. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    ArticleSemiconductor materials and interfacesApplied Solar Energy201921 citations
    ABI

  3. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201721 citations
    ABI

  4. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

    S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

    ArticleIon-surface interactions and analysisTechnical Physics201513 citations
    ABI

  5. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

    Б. Е. Умирзаков, I. R. Bekpulatov, I. Kh. Turapov +1

    ArticleSemiconductor materials and interfacesJournal of Nano- and Electronic Physics202213 citations
    ABI

  6. Investigation of structural and optical properties of zirconia dioxide nanoparticles by radiation and thermal methods

    Gunel Imanova, T.N. Agayev, S. H. Jabarov

    Article202012 citations
    ABI

  7. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    ArticleSemiconductor materials and interfacesTechnical Physics20149 citations
    ABI

  8. Influence of gamma radiation on current density and volt–ampere characteristics of metallic zirconium

    T.N. Agayev, Gunel Imanova, Anar Aliyev

    Article20226 citations
    ABI

  9. Magnetic properties of single crystalline Mn4Si7

    U. Gottlieb, A. Sulpice, B. Lambert‐Andron +1

    Article20035 citations
    ABI

  10. Resistivity and the Hall effect for thin MnSi<sub>1.73</sub>films

    C. A. Krontiras, K Promoni, M. Roilos

    Article19883 citations
    ABI

  11. An optical determination of the bandgap of the most silicon-rich manganese silicide phase

    M. Bost, John E. Mahan

    Article19872 citations
    ABI

  12. <i>Ab initio</i>study of the band structures of different phases of higher manganese silicides

    Д. Б. Мигас, В. Л. Шапошников, А. Б. Филонов +2

    Article20082 citations
    ABI

  13. Fabrication of a thick surface layer of Al3Ti on Ti substrate by reactive-pulsed electric current sintering

    T. Matsubara, T Shibutani, Koji Uenishi +1

    Article20002 citations
    ABI

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    Other1 citations
    ABI

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    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

  20. Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

    Y. S. Ergashov, S. B. Donaev

    ArticleIon-surface interactions and analysisJournal of Nano- and Electronic Physics20221 citations
    ABI