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Works cited by this work

21 works

Work: The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

  1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201523 citations
    ABI

  2. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    ArticleSemiconductor materials and interfacesApplied Solar Energy201921 citations
    ABI

  3. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201721 citations
    ABI

  4. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

    З. А. Исаханов, Z. E. Mukhtarov, Б. Е. Умирзаков +1

    ArticleIon-surface interactions and analysisTechnical Physics201119 citations
    ABI

  5. Electronic structure and optical properties of CaF2 films under low energy Ba+ ion-implantation combined with annealing

    Б. Е. Умирзаков, T.S. Pugacheva, A.T. Tashatov +1

    ArticleInorganic Fluorides and Related CompoundsNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms200016 citations
    ABI

  6. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    ArticleSemiconductor materials and interfacesTechnical Physics201415 citations
    ABI

  7. Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

    Б. Е. Умирзаков, Д. А. Ташмухамедова, E.U. Boltaev +1

    ArticleSemiconductor materials and interfacesMaterials Science and Engineering B200314 citations
    ABI

  8. Method for additional purification of the surface of Si(111) single crystal

    A. S. Risbaev, J. B. Khujaniyazov, I. R. Bekpulatov +1

    ArticleMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 citations
    ABI

  9. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    ArticleSemiconductor materials and interfacesTechnical Physics20149 citations
    ABI

  10. Structure and transport properties of the spark plasma sintered barium cerate based proton conductor

    Sergii A. Sergiienko, V.A. Kolotygin, Nataliya Shcherban +5

    Article20175 citations
    ABI

  11. On the Structure and Thermoelectric Properties of CoSi Obtained from a Supersaturated Solution–Melt in Sn

    F. Yu. Solomkin, Andrey Orekhov, S. V. Novikov +7

    Article20193 citations
    ABI

  12. Structure and Thermoelectric Properties of CoSi-Based Film Composites

    V S Kuznetsova, С. В. Новиков, Charan K. Nichenametla +2

    Article20193 citations
    ABI

  13. Effect of thermal processing on the structure and optical properties of crystalline silicon with GaSb nanocrystals formed with the aid of high-doze ion implantation

    Ф. Ф. Комаров, G. A. Ismailova, O. V. Milchanin +3

    Article20153 citations
    ABI

  14. Isostructural BaSi<sub>2</sub>, BaGe<sub>2</sub> and SrGe<sub>2</sub>: electronic and optical properties

    Д. Б. Мигас, В. Л. Шапошников, В. Е. Борисенко

    Article20072 citations
    ABI

  15. MXene-containing composite electrodes for hydrogen evolution: Material design aspects and approaches for electrode fabrication

    Sergii A. Sergiienko, Daniela Lopes, G. Constantinescu +9

    ArticleMXene and MAX Phase MaterialsInternational Journal of Hydrogen Energy20211 citations
    ABI

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    Other1 citations
    ABI