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Works cited by this work

20 works

Work: Obtaining higher manganese silicide films with high thermoelectric properties

  1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201523 citations
    ABI

  2. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    ArticleSemiconductor materials and interfacesApplied Solar Energy201921 citations
    ABI

  3. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201721 citations
    ABI

  4. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    ArticleSemiconductor materials and interfacesTechnical Physics201415 citations
    ABI

  5. Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment

    Y. S. Ergashov

    ArticleElectron and X-Ray Spectroscopy TechniquesTechnical Physics201714 citations
    ABI

  6. Structure and Properties of a Bilayer Nanodimensional CoSi2/Si/CoSi2/Si System Obtained by Ion Implantation

    Y. S. Ergashov, Б. Е. Умирзаков

    ArticleIon-surface interactions and analysisTechnical Physics201814 citations
    ABI

  7. Effect of the O+2-ion bombardment on the TiN composition and structure

    З. А. Исаханов, Б. Е. Умирзаков, М. К. Рузибаева +1

    ArticleMetal and Thin Film MechanicsTechnical Physics201513 citations
    ABI

  8. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

    S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

    ArticleIon-surface interactions and analysisTechnical Physics201513 citations
    ABI

  9. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

    Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

    ArticleSemiconductor materials and interfacesSemiconductors20175 citations
    ABI

  10. Electronic and optical properties of bulk crystals of semiconducting orthorhombic BaSi2 prepared by the vertical Bridgman method

    Shingo Kishino, Tomohiro Imai, Tsutomu Iida +4

    Article20063 citations
    ABI

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